A physical simulation model for field emission triode

Lu, Chin Lung; Lee, Chung Len

doi:10.1109/16.725259

Cited by 6 publications

References 27 publications

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Emittance of a field emission electron source

Jensen

O’Shea

Feldman

et al. 2010

Journal of Applied Physics

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An analytical formula of the emittance of a field emitter is given. In contrast to thermal and photoemission, such a formula contains complexity due to the multidimensional nature of the source. A formulation of emittance is given for one- and three-dimensional (3D) field emitters. The 3D formulation makes use of the point charge model of a unit cell emitter coupled with a trajectory analysis to follow electrons to an evaluation plane where emittance is determined. The single tip theory is extended to an array and the resulting theory predicts the emittance of a Spindt-type square array of emitters 0.2cm on a side producing 2000A∕cm2 is 23mmmrad. Theory compares favorably with experimental measurements in the literature from ungated and gated sources. The impacts of several complications are estimated: the effects of a gate for modulating the emitter; the influence of space charge within the unit cell on the beam; and constraints imposed by modulation frequency, emitter dimensions, and rise/fall time requirements for turning a beam on and off, as determined by the array’s RLC characterization.

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Emittance of a field emission electron source

Jensen

O’Shea

Feldman

et al. 2010

Journal of Applied Physics

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Analytical electrostatic model of silicon conical field emitters. I

Dvorson

Ding

Akinwande

2001

IEEE Trans. Electron Devices

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A semi empirical model of vertically aligned carbon nanofiber for field emission devices for circuit application

Rahman

Eliza

Islam

et al. 2007

2007 International Semiconductor Device Research Symposium

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The field emission from carbon thin films, nanotubes and nanofibers has received a great deal of attention because of its potential application in flat panel displays and other nanoelectronic devices. Recently, a concept for maskless Digital Electrostatically Focused E-Beam Array DirectWrite Lithography (DEAL) using a Vertically Aligned Carbon Nanofiber (VACNF) array has been developed at Oak Ridge National Laboratory (ORNL), USA [1]. This concept incorporates a digitally addressable field emission array (DAFEA) integrated into a logic and control circuit realized in standard bulk CMOS process. In order to simulate and predict the system behavior, a compact circuit model for the VACNF field emission devices is required. A physics based model for the field emission triode (FET) was previously shown [2] and an empirical model for carbon nanotube field effect transistor logic has been demonstrated [3]. There is no carbon nanofiber circuit model which can be applied in a CAD tool in order to simulate the DEAL system. This paper presents a compact model for the static and the transient electrical behavior of a VACNF field emitter devices. The VACNF has a very high aspect (height to radius) ratio [4]. As a result the work function at the tip is reduced and this can be described by Fowler-Nordheim (FN) theory [5]. The FN theory predicts the current out of the field emission devices as a function of the applied voltage and is given by:

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A physical simulation model for field emission triode

Cited by 6 publications

References 27 publications

Emittance of a field emission electron source

Emittance of a field emission electron source

Analytical electrostatic model of silicon conical field emitters. I

A semi empirical model of vertically aligned carbon nanofiber for field emission devices for circuit application

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