Articles you may be interested inErratum: "Silicon metal-oxide-semiconductor field effect transistor/field emission array fabricated using chemical mechanical polishing" [J.Silicon metal-oxide-semiconductor field effect transistor/field emission array fabricated using chemical mechanical polishing Fabrication and characteristics of an emitter-sharpened double-gate racetrack-shaped field emitter structure Gated field emission devices have great promise for a number of applications. The electron beams formed by these devices are poorly collimated, however, which limits their utility for certain applications. This article describes an approach to collimating the electron beam and forming a small spot size by using a new chemical-mechanical polishing process to make an electron lens at each field emission tip. Variations in the tip height with respect to the aperture vary ␤ F /␤ G between 0.16 and 2.67, showing significant sensitivity of the coupling between the focus gate and tip as a function of process variation. The tips exhibit good Fowler-Nordheim behavior and interesting electrostatic properties. Electron spot size reduction greater than ten times is demonstrated.

Articles you may be interested inField emission display device structure based on double-gate driving principle for achieving high brightness using a variety of field emission nanoemitters Appl. Phys. Lett. 90, 253105 (2007); 10.1063/1.2747192Beam-focusing characteristics of the diamond-film field emission arrays with parallel emitter, gates, and in-plane lens J.Structural and process characterization of high voltage operated field emission displays with focus electrodes High emission current double-gated field emitter arrays Arrays of molybdenum field emission cones with integrated focusing electrode ͑IFE-FEA͒ were studied as a potential device structure for field emission displays ͑FEDs͒ that achieve high brightness, high luminous efficiency, and longer lifetime, without loss of resolution. Device operation and optimization were examined both qualitatively and analytically. Double-gated devices were fabricated using the Spindt cone process. Extensive electrical characterization of IFE-FEAs was conducted. Preliminary optical measurements demonstrated the desired focusing effect.

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Arrays of molybdenum field emission cones with integrated focusing electrode (IFE‐FEA) were studied as a potential device structure for Field Emission Displays (FED) that achieve high brightness, high luminous efficiency, and longer lifetime, without loss of resolution. First, an analytical model for the double‐gated conical field emitter was developed and was used for device design. Devices were fabricated and subjected to extensive electrical and some optical testing. The desired focusing effect was observed.