Molybdenum Field Emitters with Integrated Focusing Electrode

Dvorson, L.; Akinwande, Akintunde I.

doi:10.1889/1.1834176

Cited by 5 publications

(4 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is observed that the average emitter current is the same for the four array sizes ranging from 100 tips to 3600 tips. We attribute this high uniformity to two factors: 1) highly uniform tip radius as compared to tips defined by lift-off [21] and 2) highly uniform aperture diameter due to the conformal, uniform LPCVD oxide and polycrystalline Si layers. The high uniformity could lead to significant reductions in the array size required per pixel in FED applications and improved yield.…”

Section: Device Characterizationmentioning

confidence: 99%

Highly uniform and low turn-on voltage Si field emitter arrays fabricated using chemical mechanical polishing

Ding

Kim

Akinwande

2000

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Turn-on voltage of about 30 V is observed in 1-µm gate-aperture Si field emitter arrays fabricated using oxidation sharpening and chemical mechanical polishing. Small emitter tip radius (∼10 nm) was achieved from low temperature oxidation sharpening. The gate leakage current is observed to be less than 0.01% of emitter current over the range of measurement. Devices show excellent emission uniformity for different sized arrays. Current saturation was observed at high gate voltages because of low dopant concentration of the substrate. Below the saturation region, the current-voltage characteristics obey the Fowler-Nordheim field emission theory.Index Terms-Chemical mechanical polishing, field emission, Fowler-Nordheim theory, low temperature oxidation.

show abstract

Section: Device Characterizationmentioning

confidence: 99%

Highly uniform and low turn-on voltage Si field emitter arrays fabricated using chemical mechanical polishing

Ding

Kim

Akinwande

2000

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…With the angular spread, electron trajectories follow a parabolic path to the anode. In higher density arrays, this can lead to cross-talk and therefore, lower resolution of displays, multi-beam lithography and imaging applications, which would often require a trade-off with luminosity [28,29].…”

Section: Introductionmentioning

confidence: 99%

Nanoscale silicon field emitter arrays with self-aligned extractor and focus gates

et al. 2020

View full text Add to dashboard Cite

Out-of-plane focusing is essential for electron beam collimation in gated field emission sources. The focus electrode redirects electrons emitted by the tip with a wide angle towards the central axis, resulting a small focal spot at the anode. Here, we demonstrate for the first time, very high density (108 emitters/cm2) arrays of double-gated field emission electron sources with self-aligned apertures and integrated nanowire current limiters. Release of the emitters after fabrication required the combination of a highly selective dry-etch and an isotropic wet-etch to avoid the loss of the insulator between the two gates. The aperture diameters are ∼360 nm and ∼570 nm for the extractor gate and focus gate, respectively. The turn-on voltage was low (15-20) V and anode currents of 400 nA were measured at 25 V. We compared devices with different extractor gate thicknesses resulting from planarization non-uniformity, and demonstrate the influence of the focus gate on anode current. The focal spot size was measured, using a low energy phosphor screen, to be around 700 µm for a 500 µm device when the ratio was 0.35.

show abstract

“…24 The addition of the second gate to form a vertical triode structure for focusing operation was demonstrated experimentally in 1995. Local and out-of-plane focusing electrodes have been fabricated for most types of FEA, including Si wafer-molded 29 and cusp-molded emitters, 30 Spindt-type emitters, 31 etched Si emitters, 27,25,32 and carbon nanotube ͑CNT͒ emitters. Methods to electrically screen the tip included positioning it below the gate 26 or increasing the extractor gate thickness.…”

Section: Introductionmentioning

confidence: 99%

“…25 In double-gate FEAs, loss of anode current, either by suppression of field emission from the tip or repulsion of electrons into the extraction electrode, could present a problem, depending on the strength of the focusing field. 33 Elimination of cross-talk in field emitter displays 31 and sources for multibeam electron beam lithography 23 were seen as potential applications. 27 To reduce the repulsive effect, it was proposed 28 to use a much larger diameter focusing aperture, partway to an in-plane scheme despite the disadvantage of reduced tip density.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of all-metal field emitter arrays with controlled apex sizes by molding

Kirk

Tsujino

Vogel

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inStable, ruggedized, and nanometer-order size transfer mold field emitter array in harsh oxygen radical environment J. Vac. Sci. Technol. B 33, 03C107 (2015); 10.1116/1.4905046 Fabrication of metallic double-gate field emitter arrays and their electron beam collimation characteristics J. Appl. Phys. 112, 093307 (2012); 10.1063/1.4764925 Nanosecond pulsed field emission from single-gate metallic field emitter arrays fabricated by moldinga) J. Vac. Sci. Technol. B 29, 02B117 (2011); 10.1116/1.3569820 Enhancement of ion-induced bending phenomenon using a double-layered film for field emitter array fabrication J. Vac. Sci. Technol. B 28, C2C1 (2010); 10.1116/1.3276096Microelectron field emitter array with focus lenses for multielectron beam lithography based on silicon on insulator waferThe authors proposed a method to fabricate field emitter arrays with uniform apex diameters in tens of nanometer scale based on the molding technique and apply it to fabricate molybdenum field emitter arrays. Apex diameter equal to 23Ϯ 5 nm was observed in a 6 ϫ 6 tip array by high-resolution scanning electron microscope. They also studied the field-emission characteristics in devices with gate electrodes fabricated on top of the arrays by a self-aligned process. In single-gate devices, emission current of up to 20 A per tip with negligible gate leak current was observed. The gate-fabrication process was extended to fabricate double-gated emitters. Further optimization of the fabrication process for higher emission current, together with metallurgical and lithographic methods, is discussed.

show abstract

Molybdenum Field Emitters with Integrated Focusing Electrode

Cited by 5 publications

References 2 publications

Highly uniform and low turn-on voltage Si field emitter arrays fabricated using chemical mechanical polishing

Highly uniform and low turn-on voltage Si field emitter arrays fabricated using chemical mechanical polishing

Nanoscale silicon field emitter arrays with self-aligned extractor and focus gates

Fabrication of all-metal field emitter arrays with controlled apex sizes by molding

Contact Info

Product

Resources

About