Co-integration of Ge detectors and Si modulators in an advanced Si photonics platform

Abstract

A Si photonics platform is described, co-integrating advanced passive components with Si modulators and Ge detectors. This platform is developed on a 200mm CMOS toolset, compatible with a 130nm CMOS baseline. The paper describes the process flow, and describes the performance of selected electro-optical devices to demonstrate the viability of the flow.

Comparison of heater architectures for thermal control of silicon photonic circuits

“…The devices were fabricated in imec's silicon photonics platform [4] on an SOI wafer with 220nm silicon on a 2µm buried oxide. First, the passive waveguides are processed.…”

Integrated SiGe Detectors for Si Photonic Sensor Platforms

“…To assess the dark current the voltage was then varied between 0 and −10 V. The results are shown in Figure 5a, indicated values lower than 0.1 nA. These values are much lower than those reported in [5,6], Table 1. The devices were then packaged using a PCB board and the responsivity was assessed by measuring the difference in current observed for different light intensities, Figure 5b.…”

Integrated Optical Chemical Sensor Based on an SOI Ring Resonator Using Phase-Interrogation

“…A single-sideband generation and coherent detection technology has been employed to measure the phase of the transmitted optical signal around the resonant wavelength of the SOI ring resonator, which exhibits a rapid variation when the cladding material changes. The extra modulator and the coherent detection technology only need to work at a single frequency, and can be integrated on-chip together with the sensing SOI ring [20]. Therefore, the proposed phase interrogation approach is easy to implement and can have a high integration density.…”