CMOS MEMS Fabrication Technologies and Devices

Abstract

This paper reviews CMOS (complementary metal-oxide-semiconductor) MEMS (micro-electro-mechanical systems) fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator) CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

Piezoresistive temperature sensors fabricated by a surface micromachining CMOS MEMS process

“…With the development of micro-fabrication process and monolithic integration technology 1 , many types of miniature temperature sensors have been studied and applied widely. Compared with conventional temperature sensors, the merits of miniature temperature sensors are lower response time, more power-saving and lower cost 2,3 .…”

Characterization of CMOS-MEMS Resonant Pressure Sensors

“…One of the current challenges of integration technology posed by the international roadmap for the semiconductor industry is the modification and standardization of CMOS technology to accommodate MEMS technology i.e. to integrate sensors and electronics in a single chip combining different fabrication techniques [2]. The advent of monolithically integrated CMOS-MEMS resonant pressure sensors have resolved this issue and can be targeted for the consumer market for assisted GPS (Global Positioning Systems) in indoor navigation systems, altimeters, and other possible interesting applications [2].…”

“…to integrate sensors and electronics in a single chip combining different fabrication techniques [2]. The advent of monolithically integrated CMOS-MEMS resonant pressure sensors have resolved this issue and can be targeted for the consumer market for assisted GPS (Global Positioning Systems) in indoor navigation systems, altimeters, and other possible interesting applications [2]. The significance of 1 An earlier reduced version of this paper was presented at the IEEE Sensors 2016 Conference in Orlando, Florida and was published in its proceedings: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7808403&isnumbe r=7808393…”

Study of the Influence of Temperature on the Deposition of SiO₂ Films from Reaction of Silicone Oil Vapor and Ozone Gas

“…SiO 2 films have been widely applied in the production of electronic devices, integrated devices, optical thin film devices, sensors, and so on [1][2][3][4][5][6][7][8][9]. Moreover, low temperature deposition of SiO 2 film on a silicon substrate is desired for high quality gate oxide films to obtain high performance thin film transistors (TFTs) and to form interlayer dielectric (ILD) to suppress the disconnection of interconnect metal [10].…”

“…This decomposition is dependent on deposition temperature [33,34]. Oliver R.Wulf& Richard C. Tolman specified the range of decomposition temperature that is 148 ºC to 179 ºC [34].Since the O is very chemically active, the overall reaction of the process of reactive oxygen and SO is shown in equation (2). In the first stage, the chemically reactive oxygen atoms are reacted with the methyl (-CH 3 ) bond of theSOin the gas phase and broken the methyl bond to form hydroxyl (-OH) bond then intermediate products of deca-hydroxyl-cyclo-penta-silaxane (precursors) are formed together with by-products of H 2 O and CO 2 .…”