Study of the Influence of Temperature on the Deposition of SiO₂ Films from Reaction of Silicone Oil Vapor and Ozone Gas

Abstract

This work reports the influence of deposition temperature on the deposition of SiO 2 films on silicon substrate by using chemical reaction of silicone oil vapor andozone gas at low temperature. An organic solution as a catalyst at atmospheric pressure has been used to enhance the deposition rate of SiO 2 . The deposition rate of SiO 2 films was found to vary with the variation of the concentration of the catalyst and deposition temperature (160°C ~ 260°C). The deposited SiO 2 films were confirmed by Fourier transform infrared (FT-IR) spectroscopy. The thickness and refractive index of the as-deposited films were measured by the laser ellipsometry. FT-IR spectra of the as-deposited films were very much similar to those of SiO 2 films found in literature. The deposition temperature was found to influence the deposition rate of SiO 2 strongly. The maximum deposition rate was found to 17.2 nm per minute for the case of 220°C. The deposition temperature also influenced the refractive index of the films. Experimental results showed that thedeposition temperature could be a major parameter for the enhancement of the deposition rate.

Influence of Deposition Conditions on Properties of Ta2O5 Films Deposited by Ion Beam Sputtering Coating Technique

“…High reflectivity mirrors are essential for commercial and military instruments [9]. Ta 2 O 5 thin-film deposition was realized using various techniques such as Sol-Gel [10], Metal-Organic CVD [11], Plasma enhanced CVD [12], Low-pressure CVD [13], Atmospheric pressure CVD [14], Ion beam sputtering [15], E-beam deposition [16], Pulse laser ablation [17] and Thermal evaporation [18]. Different characterization properties of films were reported after the successful realization of films [19][20][21].…”