CMOS-Compatible Contacts to n-InP

Ghegin, E.; Rodriguez, Philippe; Pasquali, Mattia; Sagnes, I.; Lábár, János L.; Delaye, V.; Card, T.; Fonseca, Jeremy Da; Jany, Christophe; Nemouchi, F.

doi:10.1109/ted.2017.2747619

Cited by 13 publications

(3 citation statements)

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“…As Ni 2 P was reported to lower the contact resistivity [34], a target, only made of this material, was designed and used to directly sputter the most favorable phase -and only this one -on III-V layers. The results obtained in 200 mm were strongly encouraging [22], [25], [26].…”

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confidence: 91%

“…In our group, at the CEA-Leti, we developed a contact technology that is fully compatible with a Si-Fab line. This implies studies ranging from surface preparation [16], [17] and solid-state reaction [18]- [21] to electrical results [22], [23] and integration schemes [24]- [26]. A strong experience was obtained in 200 mm with the development of a CMOS-compatible contact technology [26].…”

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confidence: 99%

“…Beyond a threshold temperature, the system evolved towards a crystalline state where the coexistence of 3 phases was reported, namely Ni 2 P, Ni 3 P and Ni 2 InP. At higher temperatures, the agglomeration of Ni 2 P and In was evidenced and the contacts became nonohmic [22], [33]. To overcome this issue, a technological solution was proposed.…”

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confidence: 99%

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Development of Ni₂P Contact Technology and Its Integration on III-V Materials for 300 mm Si Photonics Platform

Boyer

Famulok²,

Minoret³

et al. 2022

IEEE J. Electron Devices Soc.

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In order to assess their potential use as contact layers for Si photonics devices, Ni 2 P thin films were developed on a 300 mm platform. The Ni 2 P layers, obtained by magnetron sputtering of a Ni 2 P target, were stable and reproducible. The films were mainly composed of the hexagonal Ni 2 P phase with small amount of Ni 12 P 5 impurities. The film density was 6.9 g/cm 3 with a ratio of 62 at.% of Ni and 38 at.% of P.We implemented and integrated these Ni 2 P films on III-V structures to study their electrical properties on n-InP and p-InGaAs (i.e. n-doped and p-doped III-V/Si hybrid laser contact layers). The results obtained on p-InGaAs did not meet the requirements in terms of contact resistivity. On the other hand, due to its high thermal stability and low contact resistivities, Ni 2 P metallization exhibited the best results among the Ni-based metallizations studied for contacting n-InP layers, namely Ni, NiPt and Ni 2 P.

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confidence: 91%