The CMS detector at the CERN LHC features a silicon pixel detector as its innermost subdetector. The original CMS pixel detector has been replaced with an upgraded pixel system (CMS Phase-1 pixel detector) in the extended year-end technical stop of the LHC in 2016/2017. The upgraded CMS pixel detector is designed to cope with the higher instantaneous luminosities that have been achieved by the LHC after the upgrades to the accelerator during the first long shutdown in 2013–2014. Compared to the original pixel detector, the upgraded detector has a better tracking performance and lower mass with four barrel layers and three endcap disks on each side to provide hit coverage up to an absolute value of pseudorapidity of 2.5. This paper describes the design and construction of the CMS Phase-1 pixel detector as well as its performance from commissioning to early operation in collision data-taking.

The structure of the CMS inner tracking system has been studied using nuclear interactions of hadrons striking its material. Data from proton-proton collisions at a center-of-mass energy of 13 TeV recorded in 2015 at the LHC are used to reconstruct millions of secondary vertices from these nuclear interactions. Precise positions of the beam pipe and the inner tracking system elements, such as the pixel detector support tube, and barrel pixel detector inner shield and support rails, are determined using these vertices. These measurements are important for detector simulations, detector upgrades, and to identify any changes in the positions of inactive elements.

No abstract

The integration of III-V/Si hybrid lasers on a 300 mm platform for photonic applications requires the development of dedicated CMOS-compatible contacts, for which nickel-based ones are very good candidates. In this scope, this work presents and compares the impact of in situ preclean based on argon (Ar) or helium (He) plasma on the surface integrity of InP prior to the nickel (Ni) contact deposition. The resulting surface morphology, element distribution, phase formation sequence of the Ni/InP system, and electrical behavior of Ni/n-InP contacts are detailed using morphological, structural, and electrical characterizations. The results show that Ar preclean significantly damages the InP surface by generating high roughness and creating indium (In) dots on the top surface, while He preclean seems to induce lighter damages and no In dots. Although the phase sequence of the Ni/InP system is overall the same for each preclean, the electrical behavior differs depending on the nature of the preclean. On one hand, Ni/n-InP Ar-precleaned contacts exhibit nonohmic behavior for each investigated thermal budget. On the other hand, He-precleaned contacts features ohmic behavior for the as-deposited state and thermal anneals up to 350°C for 60 s. They, however, become nonohmic after anneals of 400 and 450°C for 60 s. These results, hence, suggest that the difference of electrical behavior obtained between Ar and He-precleaned Ni/n-InP contacts is due to differences in the state surface and morphology.