Study of the Ti/InGaAs solid-state reactions: Phase formation sequence and diffusion schemes

Bensalem, S.; Ghegin, E.; Boyer, F.; Lábár, János L.; Menyhárd, M.; Gergaud, P.; Nemouchi, F.

doi:10.1016/j.mssp.2020.105038

Cited by 4 publications

(2 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The solid-state reactions of several systems based either on InP or InGaAs have been extensively studied. [20][21][22][23][24][25][26] The Ti/InGaAs system has been investigated. 21,22) At low temperature-for temperatures below 250 °C-the Ti phase is the only crystalline phase in presence.…”

Section: Solid-state Reaction and Metallizationmentioning

confidence: 99%

See 1 more Smart Citation

Development of a CMOS-compatible contact technology for III–V materials and Si photonics

Rodriguez

Ghegin

Boyer

et al. 2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this progress review, an overview of the CMOS-compatible contact technology developed at the CEA-Leti for Si photonics applications is proposed. The elaboration of III–V/Si hybrid lasers implies the development of ohmic contacts on n-InP and p-InGaAs III–V materials. In this way, a contact technology fully compatible with a Si-Fab line was developed. The results presented in this manuscript cover a wide scope: from surface preparation and solid-state reaction to electrical results and integration guidelines. The metallurgy of several systems including Ni/InGaAs, Ni/InP, Ti/InGaAs and Ti/InP was studied. The direct metallization of III–V materials using Ni2P was also introduced. Most of the studied metallizations provided efficient solutions for achieving ohmic contacts on n-InP and p-InGaAs. Finally, the contact technology developed in the framework of this study was successfully integrated on 200 mm CMOS-compatible III–V/Si hybrid lasers.

show abstract

Section: Solid-state Reaction and Metallizationmentioning

confidence: 99%

“…[20][21][22][23][24][25][26] The Ti/InGaAs system has been investigated. 21,22) At low temperature-for temperatures below 250 °C-the Ti phase is the only crystalline phase in presence. An amorphous Ti-Ga-As intermixing layer and a Ti-As layer are also observed.…”

Section: Solid-state Reaction and Metallizationmentioning

confidence: 99%

Development of a CMOS-compatible contact technology for III–V materials and Si photonics

Rodriguez

Ghegin

Boyer

et al. 2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts

Aksenov

Genze

Chistokhin

et al. 2023

Surfaces and Interfaces

View full text Add to dashboard Cite

Development of Ni₂P Contact Technology and Its Integration on III-V Materials for 300 mm Si Photonics Platform

Boyer

Famulok²,

Minoret³

et al. 2022

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

In order to assess their potential use as contact layers for Si photonics devices, Ni 2 P thin films were developed on a 300 mm platform. The Ni 2 P layers, obtained by magnetron sputtering of a Ni 2 P target, were stable and reproducible. The films were mainly composed of the hexagonal Ni 2 P phase with small amount of Ni 12 P 5 impurities. The film density was 6.9 g/cm 3 with a ratio of 62 at.% of Ni and 38 at.% of P.We implemented and integrated these Ni 2 P films on III-V structures to study their electrical properties on n-InP and p-InGaAs (i.e. n-doped and p-doped III-V/Si hybrid laser contact layers). The results obtained on p-InGaAs did not meet the requirements in terms of contact resistivity. On the other hand, due to its high thermal stability and low contact resistivities, Ni 2 P metallization exhibited the best results among the Ni-based metallizations studied for contacting n-InP layers, namely Ni, NiPt and Ni 2 P.

show abstract

Study of the Ti/InGaAs solid-state reactions: Phase formation sequence and diffusion schemes

Cited by 4 publications

References 28 publications

Development of a CMOS-compatible contact technology for III–V materials and Si photonics

Development of a CMOS-compatible contact technology for III–V materials and Si photonics

Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts

Development of Ni₂P Contact Technology and Its Integration on III-V Materials for 300 mm Si Photonics Platform

Contact Info

Product

Resources

About