CMOS BDJ detector array with charge preamplifiers for sensitive biochemical analysis

Abstract

For instrumental implementation of biochemical microanalysis techniques, we have designed a CMOS BDJ (Buried Double p-n Junction) detector array and its associated charge amplifiers. The adopted amplifier configuration allows a high-sensitivity performance (100V/lx.s@555nm). The detector chip can operate in low-bias and low-temperature conditions, so as to lower the dark currents of the detector and to increase the integration time of the charge amplifiers. In such operating conditions, both MDS min (minimum detectable signal) and DR (dynamic range) can be significantly improved. We have obtained, e.g., at -10°C, MDS min = 1µlx@555nm and DR = 135dB.

A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

“…Aiming at dark current reduction, low bias voltages can be chosen [17-20, 39, 81] and cooling implementation may be considered such as the use of Peltier devices. However, to compensate the temperature effects, some on-chip temperature measurements have to be implemented, by means of thermistors [3].…”