2008
DOI: 10.3390/s8106566
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A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

Abstract: A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, ph… Show more

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Cited by 27 publications
(30 citation statements)
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“…[ 59 ] The continued research and development effort towards improved color fi lter-based imaging is recognition that it hampers the effi cacy of current color PDs.…”
Section: Reviewmentioning
confidence: 99%
“…[ 59 ] The continued research and development effort towards improved color fi lter-based imaging is recognition that it hampers the effi cacy of current color PDs.…”
Section: Reviewmentioning
confidence: 99%
“…Such a multimodal sensor array will enable synthetic analysis, for example simultaneous detection of glycohaemoglobin (HbA1c) and glucose for the diagnosis of metabolic disease. their performance is not satisfactory with regard to energy efficiency, for example quantum yield [16].…”
Section: (D) Multimodal Sensor Arraymentioning
confidence: 99%
“…4b, the current ratio from each junction produces a monotonic output with respect to wavelength. In addition, by controlling the voltage on each pn junction, which changes the depletion region width, it is possible to tune the output current for different wavelengths, which provides additional control over the detector response [20]. This control can be used to finely select and/or tune wavelengths of interest without switching optical filters.…”
Section: Chip Design and Fabricationmentioning
confidence: 99%
“…The shallower junction within the BDJ is formed by p-active and N-well layers. The deeper junction within the BDJ is formed by the N-well and p-substrate layers [20]. In the current design, the BDJ photodiode active area is 78 μm × 78 μm.…”
Section: Chip Design and Fabricationmentioning
confidence: 99%