CMOS 3D image sensor based on pulse modulated time-of-flight principle and intrinsic lateral drift-field photodiode pixels

An 8-Tap CMOS Lock-In Pixel Image Sensor for Short-Pulse Time-of-Flight Measurements

“…In order to expand the application areas of TOF imagers, improvements for depth resolution under aggressive conditions, such as longer distance and stronger ambient light, are necessary. Indirect TOF image sensors are classified into two types: a continuous-wave (CW) TOF method [1][2][3][4][5][6][7][8][9] and a short-pulse (SP) TOF method [10][11][12][13][14][15]. In CW-TOF imagers, the high depth resolution and longer distance measurements are simultaneously realized by using higher and multiple (2 or 3) modulation frequencies [5,8].…”

Experimental Investigation Into Laser Ranging With Sub-ns Laser Pulses

“…The distance from the target can then be calculated based on the known velocity of light [1]. The precision of laser radars is improving constantly, and simplicity, cost and high measurement speed (since the target may be moving) are important factors that have paved the way for the use of TOF techniques in industrial applications [2][3][4][5][6][7][8]. The construction of a typical pulsed TOF laser radar system is shown in Fig.…”

Pulsed time‐of‐flight pixel with on‐chip 20 klux background light suppression in standard CMOS technology

“…In some cases, the doping profile of the photosensor is modified to enhance the sensor's performance. This is the case of the contribution reported in Spickermann et al, where the doping profiles of pinned photodiodes are customized to increase the speed of the sensor by means of a lateral electric field. Similarly, in Han et al and Kasugai et al, the doping profile is modified so the electric field inside can be controlled using 4 and 6 transmission gates, respectively.…”