Clean transfer of graphene and its effect on contact resistance

Lee, Jooho; Kim, Yongsung; Shin, Hyun-Tae; Lee, Changseung; Lee, Dong‐Wook; Moon, Chang Yul; Lim, Jin Hong; Jun, Seong Chan

doi:10.1063/1.4819740

Cited by 58 publications

(47 citation statements)

References 29 publications

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“…Nonetheless it has been reported that some PMMA residues still remain on the surface after thermal annealing, resulting in scattering and defects . In the absence of improved (i.e., low residue) graphene transfer techniques using PMMA or other polymers, the other option for wafer‐scale residue removal is wet‐chemical cleaning typically using organic solvents such as acetone, chloroform, etc . A major issue is that the presence and distribution of these polymer residues heavily depends on experimental conditions, the quality of graphene, etc., and therefore varies significantly from one process to another.…”

Section: Summary Of Test Results Of Electrical Characterization On Gfmentioning

confidence: 99%

Cleaning Transferred Graphene for Optimization of Device Performance

Xiao

Wan

Durkan

2019

Adv Materials Inter

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Section: Summary Of Test Results Of Electrical Characterization On Gfmentioning

confidence: 99%

Cleaning Transferred Graphene for Optimization of Device Performance

Xiao

Wan

Durkan

2019

Adv Materials Inter

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“…These contamination layers can confound the analysis of the graphene since a single nanometer of organic contamination will contain more carbon atoms than a single-layer of graphene. More significantly, however, surface contaminants can degrade the electrical performance of the graphene by acting as dopants and increasing contact resistance [8][9][10] . These effects are of particular concern for graphene grown by chemical vapor deposition (CVD) .…”

Section: Introductionmentioning

confidence: 99%

Removal of Organic Contamination from Graphene with a Controllable Mass-Selected Argon Gas Cluster Ion Beam

et al. 2015

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Since the discovery of graphene, organic surface contamination has posed difficulties both for accurate characterization of the material's intrinsic properties and for development of graphene devices. In this study, we investigate the use of a mass-selected argon gas cluster ion beam for removing organic contaminants, such as residual polymethylmethacrylate (PMMA), from single-layer graphene. The influence of cluster ion size, energy and ion dose has been investigated to identify the important factors for minimizing damage to the graphene layer during the cleaning process. Raman spectroscopy was used to analyse the variation in the D-peak and G-peak intensity ratio, an indicator of damage to the graphene lattice, as a function of ion beam dose and kinetic energy per atom (E/n) in the cluster ions.Using a mass-selected 5.0 keV Ar 5000 beam with a dose of 5.00 ions/nm 2 , we were able to demonstrate removal of polymer residue and other carbonaceous material from single-layer CVD-grown graphene whilst minimizing the damage to the graphene itself. This demonstrates that the mass-selected argon cluster ion beam is a suitable, industry-relevant technology for use in large scale production of commercially-desirable CVD-grown graphene.

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“…Typical transfer of graphene -grown by CVD on Cu or Ni substrates -onto a substrate of choice, involves some intermediate stages [1][2][3][4][5][6][7][8][9]. The graphene-deposited metal substrate is coated with a polymer, e.g., poly(methyl methacryslate) (PMMA) [1], or polydimethylsiloxane (PDMS) [2] in order to protect it through the following transfer stages.…”

Section: Introductionmentioning

confidence: 99%

Transfer of Graphene with Protective Oxide Layers

et al. 2018

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Transfer of graphene, grown by Chemical Vapor Deposition (CVD), to a substrate of choice, typically involves deposition of a polymeric layer (typically, poly(methyl methacrylate, PMMA or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. Here we study a transfer of graphene with a protective thin oxide layer. The thin oxide layer is grown by Atomic Deposition Layer (ALD) on the graphene right after the growth stage on Cu foils. One can further aid the oxide-graphene transfer by depositing a very thin polymer layer on top of the composite (much thinner than the usual thickness) following by a more aggressive polymeric removal methods, thus leaving the graphene intact. We report on the nucleation growth process of alumina and hafnia films on the graphene, their resulting strain and on their optical transmission. We suggest that hafnia is a better oxide to coat the graphene than alumina in terms of uniformity and defects.

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Clean transfer of graphene and its effect on contact resistance

Cited by 58 publications

References 29 publications

Cleaning Transferred Graphene for Optimization of Device Performance

Cleaning Transferred Graphene for Optimization of Device Performance

Removal of Organic Contamination from Graphene with a Controllable Mass-Selected Argon Gas Cluster Ion Beam

Transfer of Graphene with Protective Oxide Layers

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