Transfer of Graphene with Protective Oxide Layers

Grebel, Haim; Stan, Liliana; Sumant, Anirudha V.; Liu, Y.; Gosztola, David J.; Ocola, Leonidas E.; Fisher, Brandon

doi:10.3390/chemengineering2040058

Cited by 6 publications

(13 citation statements)

References 33 publications

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“…Application of TEMAHf in the ALD process could nowadays be regarded as a part of possibly the most feasible route to HfO 2 films on graphene. ,,− Other hafnium alkylamides such as Hf[N(CH 3 ) 2 ] 4 , are also of interest because application of alkylamide-based precursor chemistry allows one to exploit rather low substrate temperatures in the range of 100–200 °C. Low temperatures effectively assist in increasing the nucleation density of films on carbon substrates …”

Section: Introductionmentioning

confidence: 99%

Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media

Kahro

Tarre

Käämbre

et al. 2021

ACS Appl. Nano Mater.

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Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the deposition of the HfO2 overlayer, to the HfO2 bottom dielectric layer pregrown on the Si/TiN substrate. Either HfCl4 or Hf[N(CH3)(C2H5)]4 was used as the metal precursor for the bottom layer. The O2 plasma-assisted process was applied for growing HfO2 from Hf[N(CH3)(C2H5)]4 also on the top of graphene. To improve graphene transfer, the effects of the surface pretreatments of the as-grown and aged Si/TiN/HfO2 substrates were studied and compared. The graphene layer retained its integrity after the plasma processes. Studies on resistive switching on HfO2-graphene-HfO2 nanostructures revealed that the operational voltage ranges in the graphene-HfO2 stacks were modified together with the ratios between high- and low-resistance states.

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Section: Introductionmentioning

confidence: 99%

Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media

Kahro

Tarre

Käämbre

et al. 2021

ACS Appl. Nano Mater.

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show abstract

“…2 for =0) and a Bragg condition, both along the array diagonal. However [27], the absorption of hafnia is rather large at this wavelength and the propagating mode at the laser frequency is very lossy. Thus the contributions to the intensity in either cases are minimal.…”

Section: Resultsmentioning

confidence: 99%

“…A monolayer graphene was grown by the Chmical Vapor Deposition (CVD) method as described in [ 29 ]. The graphene was coated with 10 nm hafnia by atomic layer deposition (ALD) prior to the graphene transfer as per our recipe described elsewhere [ 30 ]. In short, the graphene transfer process involves coating the hafnia-covered graphene with an additional, 250 nm layer of poly(methyl methacrylate), PMMA, which can be retained as an optical waveguide or may be easily dissolved, leaving the hafnia-covered graphene intact.…”

Section: Methods and Experimentsmentioning

confidence: 99%

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The Effect of Periodic Spatial Perturbations on the Emission Rates of Quantum Dots near Graphene Platforms

Miao

Gosztola

et al. 2020

Materials

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The quenching of fluorescence (FL) at the vicinity of conductive surfaces and, in particular, near a 2-D graphene layer has become an important biochemical sensing tool. The quenching is attributed to fast non-radiative energy transfer between a chromophore (here, a Quantum Dot, QD) and the lossy graphene layer. Increased emission rate is also observed when the QD is coupled to a resonator. Here, we combine the two effects in order to control the emission lifetime of the QD. In our case, the resonator was defined by an array of nano-holes in the oxide substrate underneath a graphene surface guide. At resonance, the surface mode of the emitted radiation is concentrated at the nano-holes. Thus, the radiation of QD at or near the holes is spatially correlated through the hole-array’s symmetry. We demonstrated an emission rate change by more than 50% as the sample was azimuthally rotated with respect to the polarization of the excitation laser. In addition to an electrical control, such control over the emission lifetime could be used to control Resonance Energy Transfer (RET) between two chromophores.

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“…Cherian et al studied low-potential electrochemical methods where they described the mechanism of delamination as the reduction to metallic copper of the copper oxide passivating layer between copper and graphene, weakening the substrate [62]. Wang et al extended this method by carbonating the electrolyte bath, coupling carbonate-based chemical reduction of copper oxide with its electrochemical reduction, with the ancillary goal of being able to recycle the copper growth substrate (Figure 5b-d) [61].…”

Section: Non-etching Methods To Weaken the Substrate Interaction Coefficientmentioning

confidence: 99%

Graphene Transfer: A Physical Perspective

Langston

Whitener

2021

Nanomaterials

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Graphene, synthesized either epitaxially on silicon carbide or via chemical vapor deposition (CVD) on a transition metal, is gathering an increasing amount of interest from industrial and commercial ventures due to its remarkable electronic, mechanical, and thermal properties, as well as the ease with which it can be incorporated into devices. To exploit these superlative properties, it is generally necessary to transfer graphene from its conductive growth substrate to a more appropriate target substrate. In this review, we analyze the literature describing graphene transfer methods developed over the last decade. We present a simple physical model of the adhesion of graphene to its substrate, and we use this model to organize the various graphene transfer techniques by how they tackle the problem of modulating the adhesion energy between graphene and its substrate. We consider the challenges inherent in both delamination of graphene from its original substrate as well as relamination of graphene onto its target substrate, and we show how our simple model can rationalize various transfer strategies to mitigate these challenges and overcome the introduction of impurities and defects into the graphene. Our analysis of graphene transfer strategies concludes with a suggestion of possible future directions for the field.

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Transfer of Graphene with Protective Oxide Layers

Cited by 6 publications

References 33 publications

Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media

Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media

The Effect of Periodic Spatial Perturbations on the Emission Rates of Quantum Dots near Graphene Platforms

Graphene Transfer: A Physical Perspective

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