Cl 2 plasma passivation of etch induced damage in GaAs and InGaAs with an inductively coupled plasma source

Abstract

Smooth sidewall in InP-based photonic crystal membrane etched by N 2 -based inductively coupled plasmaLow energy Cl species generated in an inductively coupled plasma source have been used to passivate etch induced damage in GaAs and InGaAs. Improved electrical and optical characteristics were measured after Cl 2 plasma passivation. The ideality factor and barrier height of etched GaAs Schottky diodes were improved back to the values of an unetched sample with a 10 min passivation. No etching occurred during passivation due to the presence of a surface oxide layer. The growth conditions of the oxide layer were found to have a large effect on the ability of the Cl 2 plasma to passivate the surface. It was found that native oxides allow more effective passivation by Cl species as compared to plasma grown oxides. The passivation techniques were used to passivate damage along an etched sidewall for improved electrical conductivity of GaAs wires and increased photoluminescence signal from etched gratings containing an InGaAs quantum well.

Characteristics of a photonic bandgap single defect microcavity electroluminescent device

“…Mesa-etched devices with p and n contacts were first fabricated by optical lithography, dry and wet etching, metallization, and polymide planarization. Lateral wet-oxidation [25] of the Al Ga As layers was used here to funnel the charge carriers more efficiently into the center of the PBG region, which is next formed by e-beam lithography, pattern transfer, and deep dry etching techniques [26]. The window inside the oxide ring is measured to be m in diameter.…”

Self-aligned process for single electron transistors

“…The Fermi energy was taken from literature 11 and is estimated to be ϳ100 meV above the conduction band. 13 Thus, for a source-drain pillar of cross-sectional dimension 200ϫ200 nm 2 , the effective electrical conducting area will be 76ϫ76 nm 2 . This Al composition in the barrier was chosen because it yields a calculated discontinuity in the conduction band of 0.224 eV, ϳ0.15 eV above the Fermi level of GaAs source and drain when both are doped at 5ϫ10 18 cm Ϫ3 .…”

“…8,13,[17][18][19][20] A micrograph of an etched pillar is shown in Fig. The samples are etched using the ICP system with conditions of 150 W source and 40 W stage power.…”

Impurity mode techniques applied to the study of light sources

“…Photonic crystal-based lasers and microcavity light sources, however, represent only one design approach. A number of different technologies, upon which the designs can be based, have appeared in recent years [30][31][32][33][34][35][36][37][38][39][40][41]. We will focus, in what follows, on the physics of photonic crystal slabs and their impurities.…”