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Self-organized In 0.4 Ga 0.6 As/GaAs quantum-dot single-mode ridge waveguide lasers with intracavity absorber were grown by molecular beam epitaxy. Bistability in the light-current characteristics of 3 m single-mode edge-emitting laser was obtained by controlling the intracavity absorber voltage. Self-pulsation was also observed with a center frequency of 1.6 GHz and linewidth Ͻ10 MHz.

We have studied the wet thermal oxidation of In0.52Al0.48As and its potential application in current and optical confinement in vertical cavity surface emitting lasers (VCSELs). Two types of InP-based heterostructures were used to study the effect of adjacent layer compositions on the lateral oxidation behavior of the InAlAs. It was found that the oxidation of In0.52Al0.48As with InP adjacent layers, compared with In0.53Ga0.47As adjacent layers, proceeded faster, more uniformly and with minimal degradation of the surrounding layers making it ideal for optoelectronic applications.

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