Characteristics of a photonic bandgap single defect microcavity electroluminescent device

Abstract

A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAsbased heterostructure. The gain region consists of two 70-Å compressively strained In 0 15 Ga 0 85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 W. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The lightcurrent characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single-or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor 0 06.

Variation in the Absolute Photonic Band Gap of Rods Ranging from Square to Octagonal in Square Lattices

“…Absolute PBGs can control spontaneous light emissions for non-threshold semiconductor lasers. 4,5) The fabrication and simulation of photonic crystals in the infrared (IR), ultraviolet (UV), and visible regions have received considerable interest. [6][7][8][9][10][11] However, the greatest constraint to large PBG width is the degeneration of photonic bands at the highly symmetrical points in the Brillouin zone.…”

Spectrally selective infrared absorption in defect-mode photonic-crystal-slab cavity

“…Owing to the ability of spontaneous emission control [1,3], photonic crystal slab (PCS) [4] waveguide cavities have been a subject of active research for ultra-compact high efficiency light sources [5,6], with potentially zero threshold [7][8][9][10]. Additionally, PC structures can lead to other physical phenomena, e.g., optical absorption property alteration, through the photonic density of states (DOS) engineering [11].…”

Electrically injected quantum dot photonic crystal microcavity light emitters and microcavity arrays

“…In all these electrically injected microcavity light emitters that have been reported, large carrier loss occurs in the surface states as the injected carriers traverse the etched surfaces of the photonic crystal to reach the active region [19][20][21], thereby reducing the carrier injection efficiency. The surface scattering related loss was also a carrier loss component in the first demonstrated electrically injected QW single cell PC microcavity laser [21].…”

“…The first electrically injected surface-emitting 2D PC microcavity light source with multiquantum well emission at 0.94 µm was demonstrated by Zhou et al [19]. Thereafter, a 2D PC microcavity light emitter with QD active region was demonstrated by Sabarinathan et al [20].…”

“…The approach to electrical injection employed by Zhou et al [19] involved the use of DBRs for out-of-plane optical confinement and PC air-holes for optical confinement in the in-plane direction. This configuration leads to lower Q factors due to reduced refractive index contrast, but provides better mechanical stability and thermal conductivity.…”