Self-aligned process for single electron transistors

Berg, Elliot J.; Pang, Shujie

doi:10.1116/1.1406154

Cited by 4 publications

(4 citation statements)

References 18 publications

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“…The slight off-set of the simulated data points is within expectation as explained elsewhere. 34 Upon annealing in an oxygen atmosphere at a temperature of 900 1C, i.e. 32 The stoichiometry of the layers was probed by RBS and ERD (see Table 1).…”

Section: Resultsmentioning

confidence: 99%

Characterization of thin films of the solid electrolyte Li_xMg_1−2xAl_2+xO₄ (x = 0, 0.05, 0.15, 0.25)

Put

Vereecken

Mees

et al. 2015

Phys. Chem. Chem. Phys.

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RF-sputtered thin films of spinel Li(x)Mg(1-2x)Al(2+x)O4 were investigated for use as solid electrolyte. The usage of this material can enable the fabrication of a lattice matched battery stack, which is predicted to lead to superior battery performance. Spinel Li(x)Mg(1-2x)Al(2+x)O4 thin films, with stoichiometry (x) ranging between 0 and 0.25, were formed after a crystallization anneal as shown by X-ray diffraction and transmission electron microscopy. The stoichiometry of the films was evaluated by elastic recoil detection and Rutherford backscattering and found to be slightly aluminum rich. The excellent electronic insulation properties were confirmed by both current-voltage measurements as well as by copper plating tests. The electrochemical stability window of the material was probed using cyclic voltammetry. Lithium plating and stripping was observed together with the formation of a Li-Pt alloy, indicating that Li-ions passed through the film. This observation contradicted with impedance measurements at open circuit potential, which showed no apparent Li-ion conductivity of the film. Impedance spectroscopy as a function of potential showed the occurrence of Li-ion intercalation into the Li(x)Mg(1-2x)Al(2+x)O4 layers. When incorporating Li-ions in the material the ionic conductivity can be increased by 3 orders of magnitude. Therefore it is anticipated that the response of Li(x)Mg(1-2x)Al(2+x)O4 is more adequate for a buffer layer than as the solid electrolyte.

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Section: Resultsmentioning

confidence: 99%

Characterization of thin films of the solid electrolyte Li_xMg_1−2xAl_2+xO₄ (x = 0, 0.05, 0.15, 0.25)

Put

Vereecken

Mees

et al. 2015

Phys. Chem. Chem. Phys.

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“…As the difference between Au 5 Al 2 ͑−20.0 kJ/ mol͒ and Au 2 Al ͑−19.8 kJ/ mol͒ is negligibly small thermodynamically, either could be the preferable and primary intermetallic. In thin film studies ͑where Al and Au films were deposited one by one without breaking the vacuum͒ x-ray diffraction and Rutherford backscattering spectrometry found Au 5 Al 2 was the formed initially, [28][29][30]46 while elsewhere Au 5 Al 2 and Au 2 Al reportedly grew simultaneously. 47 During annealing, Majni et al 30 found that Au 2 Al was the second phase to appear while Xu et al 28,29 showed that Au 4 Al was formed after Au 5 Al 2 .…”

Section: -5mentioning

confidence: 99%

A micromechanism study of thermosonic gold wire bonding on aluminum pad

Liu

Silberschmidt

et al. 2010

Journal of Applied Physics

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A micromechanism of thermosonic gold wire bonding was elaborated by examining its interfacial characteristics as a result of the bonding process, including the fragmentation of the native aluminum oxide layer on Al pads, and formation of initial intermetallic compounds ͑IMCs͒. It is found that the existence of an approximately 5 nm thick native oxide layer on original Al pads has a significant effect on the bonding, and the nucleation of IMCs during the bonding process must overcome this relatively inert thin film. Bonding strength was fundamentally determined by the degree of fragmentation of the oxide films, through which the formation of IMCs can be initiated due to the direct contact of the metal surfaces to be bonded. The extent of fracture the oxide layer was strongly influenced by the level of ultrasonic power, as at its high level alumina fragmentation becomes pervasive resulting in contiguous alloy interfaces and robust bonds. The IMCs formed at the interfaces were identified as Al 4 Al and AuAl 2 with a thickness of 150-300 nm. The formation mechanism of such IMCs was explained by the effective heat of formation theory.

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“…4,5 With the annealing step, pitting is observed easily on the source/drain regions of the NMOS transistors etched using recipe B. The annealing step performed in the second experiment will activate the gate dopants, thus enhancing the etch rate variation between the dual-doped gates.…”

Section: Physical Characterizationmentioning

confidence: 99%

“…4,5 For older generation ͑Ͼ0.25 m͒ technologies, Si pitting has not been reported to cause any significant shift in device characteristics. For example, ͑a͒ the lower portion of the wafer farthest from the gas pump is found to etch faster than the portion nearer to the pump, ͑b͒ the outermost regions of nested lines etch faster than the inner regions, 1-3 and ͑c͒ n-type doped polysilicon gates etch faster than p-type doped gates for dualdoped gate technology.…”

Section: Introductionmentioning

confidence: 99%

Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal–oxide–semiconductor and p-type metal–oxide–semiconductor transistors

Chua¹,

Chor

Goh³

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inTrap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics New insights in the passivation of high-k/InP through interface characterization and metal-oxide-semiconductor field effect transistor demonstration: Impact of crystal orientation Silicon metal-oxide-semiconductor field effect transistor/field emission array fabricated using chemical mechanical polishing Vertical p-type high-mobility heterojunction metal-oxide-semiconductor field-effect transistorsThe causes of pitting on an active silicon surface and its impact on 0.15 and 0.30 m n-type metal-oxide semiconductor ͑NMOS͒ and p-type metal-oxide-semiconductor ͑PMOS͒ transistors have been assessed. During polysilicon gate patterning, the gate oxide at the source/drain regions of the NMOS transistors may be etched away due to insufficient selectivity of the etch chemistry, improper etch chamber configuration, pattern density, and the adoption of dual-doped gate technology. The exposed silicon substrate has poor selectivity against the polysilicon gate, this causes Si pitting to occur on the source/drain active regions of the NMOS transistors. However, there is no significant pitting observed for the PMOS transistors due to the slower etch rate of the undoped polysilicon of the PMOS transistors. Pitting on the active areas severely degrades the device parameters, such as drive current, series resistance, and transconductance. This is worse for the 0.15 m NMOS transistors compared to the 0.30 m NMOS transistors. The channel resistance of the 0.30 m transistors is much larger than any increase in the external resistance caused by the pitting. As a result, Si pitting has negligible effects on the device performance of long channel devices.

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Self-aligned process for single electron transistors

Abstract: Articles you may be interested inFabrication of nanogapped single-electron transistors for transport studies of individual single-molecule magnets

Cited by 4 publications

References 18 publications

Characterization of thin films of the solid electrolyte Li_xMg_1−2xAl_2+xO₄ (x = 0, 0.05, 0.15, 0.25)

Characterization of thin films of the solid electrolyte Li_xMg_1−2xAl_2+xO₄ (x = 0, 0.05, 0.15, 0.25)

A micromechanism study of thermosonic gold wire bonding on aluminum pad

Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal–oxide–semiconductor and p-type metal–oxide–semiconductor transistors

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Self-aligned process for single electron transistors

Abstract: Articles you may be interested inFabrication of nanogapped single-electron transistors for transport studies of individual single-molecule magnets

Cited by 4 publications

References 18 publications

Characterization of thin films of the solid electrolyte LixMg1−2xAl2+xO4 (x = 0, 0.05, 0.15, 0.25)

Characterization of thin films of the solid electrolyte LixMg1−2xAl2+xO4 (x = 0, 0.05, 0.15, 0.25)

A micromechanism study of thermosonic gold wire bonding on aluminum pad

Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal–oxide–semiconductor and p-type metal–oxide–semiconductor transistors

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Characterization of thin films of the solid electrolyte Li_xMg_1−2xAl_2+xO₄ (x = 0, 0.05, 0.15, 0.25)

Characterization of thin films of the solid electrolyte Li_xMg_1−2xAl_2+xO₄ (x = 0, 0.05, 0.15, 0.25)