ChemInform Abstract: SURFACE CHARGES IN A ZINC‐BOROSILICATE GLASS/SILICON SYSTEM

1984

Two normalZnO‐B2O3‐SiO2 glasses, glass A ( normalZnO:65.4 , B2O3:24.5 , SiO2:10.1 weight percent [w/o]) and glass B ( normalZnO:63 , B2O3:29 , SiO2:8 normalw/normalo ), were prepared for the purpose of passivating high voltage silicon devices. Their physical and electrical properties were compared using DTA characteristics, SEM observations, x‐ray diffraction patterns, thermal expansion coefficients, and surface charge densities, as a function of firing temperature. Reverse characteristics of semiconductor devices passivated with these glasses were also investigated. Differences in the variation of properties with firing temperature between the two glasses were found to originate mainly from differences in the variation of crystal morphology in the glasses as a function of firing temperature.

mentioning

confidence: 99%

Properties of ZnO ‐ B 2 O 3 ‐ SiO2 Glasses for Surface Passivation

1984

“…We also treat the interface as having a finite thickness, and have developed a diffusion potential model for a sysg f=h(Nt-t [1] is based on first-order kinetics (7). N, is the doping concentration of the interface in material 1 and N2 the doping concentration in material 2 (Fig.…”

Section: Discussionmentioning

confidence: 99%

ZnO ‐ B 2 O 3 ‐ SiO2 Glass/Silicon Interface Studies of the Direct Observation and Chemical Depth Profile

Okajima

1991

The glass/silicon interface was studied for two glass A [ZnO: 65.4, B203: 24.5, and SiO2:10.1 weight percent (w/o)] and glass B (ZnO: 63, B203: 29, and SiO2:8 w/o). Direct observations involved treatments utilizing the differences in etching rate between the g]ass, silicon, and glass/silicon interface and chemical depth profiling using secondary ion mass spectroscopy. At firing temperatures below 690~ glass and silicon react locally and there is no difference in the glass/silicon interface between glasses A and B. At firing temperatures above 740~ however, glass and silicon react at the entire interface and differences emerge for the two glasses. The chemical depth profile of the interface layer depends on the firing temperature, rather than the glass composition.

“…where To,MJ is the effective lifetime within a reverse biased metallurgical p § junction, W the depletion layer width of metallurgical p*-n junction, D~, % the diffusion constant and lifetime of minority carrier within the neutral n region, respectively, ND the impurity concentration of n region, and n~ the intrinsic carrier density. The intrinsic carrier density n~ is expressed as following function of absolute temperature T (11) n,= 3.87x 10"~T:~'~ exp ( 7.02x 10':~_) [5] If the bulk generation-recombination centers are indeed located near the intrinsic Fermi level, the temperature dependence of IR.Mj is mainly proportional to n, (first term) and n~ ~ (second term). When the surface under the gate electrode is inverted, the field-induced junction is formed between inverted p region and underlying substrate.…”

Section: Ii~ = I~~u + Ij~vi (Xlm~0 [3]mentioning

confidence: 99%

Investigation of Leakage Currents in a Zinc Borosilicate Glass Passivated p‐n Junction Using a Gate‐Controlled Diode

Murakami

Momma

1985

A new type of gate‐controlled diode to investigate the leakage currents of a thick zinc‐borosilicate glass passivated p+‐n junction is described. Using this diode, temperature dependencies of surface and bulk components of the leakage current were measured at different values of the reverse voltage. It was revealed that the surface generation current component cannot be ignored, as compared with bulk current component, even at temperatures above 100°C. The surface recombination velocity at room temperature in glass/silicon system calculated from surface generation current component exhibited a larger value of 300–400 cm/s than did the SiO2/normalsilicon system, and it tended to decrease with decreases in reverse voltage or with increases in junction temperature.