Investigation of Leakage Currents in a Zinc Borosilicate Glass Passivated p‐n Junction Using a Gate‐Controlled Diode

Abstract

A new type of gate‐controlled diode to investigate the leakage currents of a thick zinc‐borosilicate glass passivated p+‐n junction is described. Using this diode, temperature dependencies of surface and bulk components of the leakage current were measured at different values of the reverse voltage. It was revealed that the surface generation current component cannot be ignored, as compared with bulk current component, even at temperatures above 100°C. The surface recombination velocity at room temperature in glass/silicon system calculated from surface generation current component exhibited a larger value of 300–400 cm/s than did the SiO2/normalsilicon system, and it tended to decrease with decreases in reverse voltage or with increases in junction temperature.

Effects of Bi2O3 and Na2O on the Thermal and Dielectric Properties of Zinc Borosilicate Glass for Plasma Display Panels

“…In this regard, another candidate, ZnO–B 2 O 3 –SiO 2 (ZBS), has attracted interest, as it was originally developed for low melting glasses for various applications such as thick‐film microelectronics applications, 8–12 optical glasses, 13–17 and microwave dielectric ceramics 18 . Dymant et al 8 .…”

“…were interested in the SiO 2 –B 2 O 3 ‐rich ZBS–Bi 2 O 3 composition region where they systematically investigated the influence of the Bi 2 O 3 /ZnO ratio on T g and CTE but dielectric properties were not reported. On the other hand, as most of the optoelectronic and microwave applications have been based on ZnO–B 2 O 3 ‐rich ZBS compositions (ZnO takes 50–60 mol%, and ZnO plus B 2 O 3 takes 80–100 mol%), 9–18 more chance of reliability verification has been given to the high ZnO–B 2 O 3 region. In light of Wu and Huang, 18 the ZnO–B 2 O 3 ‐rich ZBS possesses a dilatometric softening point T d of 580°–600°C and a dielectric constant K in the range 6.88–7.56.…”

Polarization Induced Instability in a Glass Passivated p‐n Junction

“…2, a peak leakage current can be found for each curve. Earlier work (7) showed that a weak inversion begins at a certain gate voltage at which the leakage current peaks. Therefore, this critical gate voltage Vthw can be interpreted as the threshold voltage for onset of the inversion.…”

“…1). The fabrication process of the GCD has been reported elsewhere (7). The p+-n diode was fabricated by the same process, except for the absence of the gate electrode of the GCD.…”

“…Miwa and co-workers investigated surface stability of the p-n junction using gate-controlled diode (GCD) (6). And recently, a new type of GCD was proposed to evaluate the leakage currents of a thick zinc-borosilicate glass passivated p-n junction (7).…”