Abstract:The polarization induced instability of a glass passivated p+‐n junction under bias‐temperature (BT) stress aging has been investigated by using a gate controlled diode (GCD) and a p+‐n diode. It is shown that positive and negative gate bias‐temperature (±GBT) stress aging causes the net surface charge density to shift symmetrically due to polarization in the glass layer. Plateau and stepped reverse current‐voltage characteristics, owing to excess positive and negative net surface charge densities, respectivel… Show more
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