Behavior of hydrogen and deuterium on copper surface was studied in detail. Desorption spectra, adsorption isotherms and the kinetics of exchange reaction predicted that hydrogen is adsorbed dissociatively and the H2–D2 equilibration proceeds via the recombination between adsorbed atoms. The optimum values of rate constants for adsorption and desorption were determined by simulating the reaction time course. Obtained constants were found to coincide with those derived by the transition state theory. Influence of molecular motion on adsorption was examined by analyzing the computed trajectories of hydrogen on a dual Cu site.
A new type of gate‐controlled diode to investigate the leakage currents of a thick zinc‐borosilicate glass passivated p+‐n junction is described. Using this diode, temperature dependencies of surface and bulk components of the leakage current were measured at different values of the reverse voltage. It was revealed that the surface generation current component cannot be ignored, as compared with bulk current component, even at temperatures above 100°C. The surface recombination velocity at room temperature in glass/silicon system calculated from surface generation current component exhibited a larger value of 300–400 cm/s than did the
SiO2/normalsilicon
system, and it tended to decrease with decreases in reverse voltage or with increases in junction temperature.
HF‐normaltreated
Si (100) substrates were used for low‐temperature (900°C) epitaxy. A conventional low‐pressure chemical vapor deposition (LPCVD) system was used for Si deposition. The stacking fault density (SFD) in the epitaxial layer drastically increased with the duration of the ultrapure water rinse time after
HF
dipping. Oxygen, fluorine, and carbon contaminants after
HF
treatment were measured by x‐ray photoelectron spectroscopy. The chemical bonding state of the residual carbon was related to the
HF
concentrations. For the 5%
HF
treatment, which corresponded to the optimum epitaxial condition, mainly C‒O was present.
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