Properties of ZnO ‐  B 2 O 3 ‐ SiO2 Glasses for Surface Passivation

Misawa, Yutaka

doi:10.1149/1.2115979

Cited by 7 publications

(3 citation statements)

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“…2 and are obtained as 718 ~ and 748~ respectively. These values are almost the same as reported by Misawa (2). Figure 3 shows the DTA curves fired at the same temperature profiles as used to form the glass/silicon systems.…”

Section: Resultssupporting

confidence: 76%

“…Dlt is obtained by the Terman method (6). In evaluating Dit from the high frequency C-V curve, Sugano et al (7) showed a useful expression as follows Dit=IcG dC ( dV~xp dVtn) q ~ dC dC [2] where C is the measured serial capacitance composed of the glass layer and silicon; V~p the experimental gate voltage at the silicon surface potential Os; and Vth the theoretical gate voltage at ~ obtained from the theoretical high frequency C-V curve without any other charges such as the fixed charge in the insulator and the interface trap density. Thermal properties of the glass were measured by differential thermal analysis (DTA) using a Sinkuh Rikoh Company, Limited Type DT-1500.…”

Section: Methodsmentioning

confidence: 99%

“…The ternary ZnO-B203-SiO2 glass is used for passivation of power semiconductor devices. Because of its importance to these devices, a number of investigations have looked at the glass/silicon interface (1)(2)(3)(4). Misawa (3) reported the presence of a negative or positive net number of charges in the glass layer could be ensured by controlling the firing temperature and glass composition.…”

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Characterization of Zinc Borosilicate Glass/Silicon Interface

Murakami

Miyata

Tsuruoka

et al. 1987

J. Electrochem. Soc.

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The electrical and physical properties of the ternary compound ZnO-B20:~-SiO2 glass/silicon interfaces were compared using the high frequency C-V curves of a MIS diode, differential thermal analysis (DTA) characteristics, SEM observation, x-ray diffraction, and secondary ion mass spectroscopy (SIMS) analysis, as a function of firing temperatures. It was revealed that effects of increasing firing temperatures on the glass/silicon systems were: (i) a crystallization in the glass layer which caused roughening of the silicon interface by the reaction of glass with silicon, and resulted in increased trapped charge density at the interface, N~,; and (ii) B impurity diffusion into the silicon from the glass which decreased the glass fixed charge density, Nf, so as to compensate for n-type silicon.The ternary ZnO-B203-SiO2 glass is used for passivation of power semiconductor devices. Because of its importance to these devices, a number of investigations have looked at the glass/silicon interface (1-4). Misawa (3) reported the presence of a negative or positive net number of charges in the glass layer could be ensured by controlling the firing temperature and glass composition. Murakami and co-workers (4, 5) investigated the reverse current-voltage characteristics of a zinc borosilicate glass passivated p-n junction in relation to the interfacial electrical factors. However, some ambiguities remain, for example, how does the chemical or physical history affect the electrical factors at the glass/silicon interface?The purpose of this work is to characterize the glass/ silicon interface electrically and structurally using a zinc b0rosilicate glass/silicon system, with special emphasis on the effects of the glass firing temperatures. We used a SEM photomicroscopic observation of the glass/silicon interface, optical photomicroscopy of the silicon surface with the glass layer removed, differential thermal analysis (DTA) to characterize the thermal properties of the glass itself, and x-ray diffraction to investigate crystallization of the fired glass layer. In addition, secondary ion mass spectroscopy (SIMS) was employed to identify the impurities at the silicon surface. Based on these experimental results, we proposed a new concept to explain the kinetics of the crystallization of the glass layer and its effect on the interfacial electrical characteristics as a function of firing temperatures. ExperimentalSample prepara~ion.--Silicon wafers used in the experiments were 8 -+ 0.2 tl cm, 228 -+ 2 ~m thick, phosphorus-doped n-type substrate with (111) orientation. Sample preparation was done as follows. The silicon wafer surface was chemically etched by ID etchant [HNO3:HF:CH3COOH:iodine liquid (27g I2 dissolved in 2100 cm 3 CH3COOH) = 135:40:65:15 volume ratio] for 5s and then cleaned in deionized water. An electrophoretic method was used to deposit glass powders of ZnO [65 weight percent (w/o)], B203 (25 w/o), and SiO2 (10 w/o) composition on the clean surface. Firing was then carried out in an oxygen atmosphere at temperatures ...

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Section: Resultssupporting

confidence: 76%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

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