ChemInform Abstract: An Etching Mechanism of Ta by Chlorine‐Based Plasmas

Abstract

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Production of Molybdenum and Tantalum Ion Beams using CCl2F2

“…The rates of tantalum etching rates can reach also the values of several µm per minute [38,39]. Different Mo or Ta halide molecules are released to plasma [36] and then destroyed and ionised by electron impact in the discharge region, however, small amounts of molecular halide ions are observed after mass-separation.…”

Etching characteristics of fine Ta patterns with electron cyclotron resonance chlorine plasma

“…The [3]. The C1 atom i n t e n s i t y (the major etching species) measure by OES (725.6nm) increases with RF bias but i s not very sensitive t o i t (Fig.…”