Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

Starschich, S.; Griesche, David; Schneller, Theodor; Waser, Rainer; Böttger, U.

doi:10.1063/1.4879283

Cited by 148 publications

(133 citation statements)

References 18 publications

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“…It is worth noting that this thickness independent scaling as already been achieved in films deposited by chemical solution deposition (CSD) in the pioneering work by Starschich et al 15 However, the multiple heating steps necessary to build up a nano-crystalline thick film, which is a prerequisite to maintain the ferroelectric properties at increased film thickness, raises concerns regarding the manufacturability and 3D-capability of a CSD based process. In this case chemical vapor deposition based methods like ALD, which is established in semiconductor manufacturing, appears highly favorable.…”

Section: Introductionmentioning

confidence: 99%

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

2016

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Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers

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Section: Introductionmentioning

confidence: 99%

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

2016

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“…Earlier studies principally prepared orthorhombic HfO 2 ultrathin films using atomic-layer-deposition (ALD), 5)7) chemicalsolution-deposition (CSD), 8) and pulsed-layer-deposition (PLD). 9) Actually, ALD method is commonly used for the preparation of HfO 2 -based thin films with ferroelectricity, but this method is very complicated for deposition of thin films.…”

Section: )4)mentioning

confidence: 99%

Solid state epitaxy of (Hf,Zr)O<sub>2</sub> thin films with orthorhombic phase

Kiguchi

Nakamura

Akama

et al. 2016

J. Ceram. Soc. Japan

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Hf 0.5 Zr 0.5 O 2 (HZO) thin films with orthorhombic phase Pca2 1 are novel ferroelectric materials. We have attempted the epitaxial growth of HZO thin films using solid-state epitaxy with ion-beam sputtering followed by rapid thermal annealing. X-ray diffraction (XRD) profiles of HZO thin films on SiO 2 glass substrates showed {111}-oriented monoclinic and orthorhombic phases. On the other hand, XRD profiles of HZO on yttria stabilized zirconia (YSZ) (100) substrates indicated the shoulder peak on the strong tail of 200 peak of YSZ substrates in the lower 2ª side. Structural analyses of the HZO thin films have conducted to identify constituent phases, the local orientation, and the nanostructure of HZO thin films using aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and the related STEM-EDS analysis. In this paper, we have described the orthorhombic (Pca2 1 ) and monoclinic (P2 1 /c) phases coexisted based on multislice image simulation and diffractogram analysis of the local regions in HZO thin films. The principal phase in the HZO/YSZ epitaxial thin films is the orthorhombic phase. Each phase was epitaxially grown on the YSZ substrate with a domain structure of the order of 10 nm in size. The orthorhombic phase has formed in the HZO/SiO 2 glass thin films, which indicates that the stability of the orthorhombic phase is ascribed to not only pseudomorphic or lattice mismatch effects of the substrate but also doping effects and thermal mismatch between the film and the substrate. The mosaicity of thin film is high because of lattice deformation with coexisting monoclinic phase and a damaged region between thin film and substrate caused by sputtered particles with high energy. Orthorhombic single-phase thin films with higher quality can be obtained by preparing ultrathin HZO epitaxial thin films under lower Ar-ion beam energy in the sputtering process and the higher crystallization temperature in the post-annealing process.

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“…Since the first report of ferroelectricity in Si-doped HfO 2 crystalline films, ferroelectric HfO 2 films have been reported using many types of dopants, such as Si, 1-6) Zr, [6][7][8][9][10] Y, [4][5][6][11][12][13] Al, [4][5][6]14) Gd, 4,15,16) Sr, 5,17) La, 18,19) Sc, 6) Ge, 6) and N. 6,20) Nondoped HfO 2 films also show ferroelectricity when an appropriate amount of oxygen deficiency is introduced. 12,[21][22][23] It is widely recognized that the ferroelectricity in HfO 2 is attainable in a particular range of dopant concentrations, and its spontaneous polarization is induced by the displacement of oxygen ions in the noncenter symmetric orthorhombic phase crystal.…”

Section: Introductionmentioning

confidence: 99%

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

Migita

Ota

Yamada

et al. 2018

Jpn. J. Appl. Phys.

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The electrical properties of ferroelectric Hf-Zr-O ultrathin films, particularly the dependences of remnant polarization, leakage current, coercive field, and breakdown field on the metal composition and film thickness, are systematically examined. Physical analyses show that the Hf-Zr-O films in this experiment consist of polycrystalline grains and contain both ferroelectric and dielectric phases. It is found that changes in metal composition and thickness strongly influence the remnant polarization and the leakage current simultaneously. In contrast, the coercive field was relatively unaffected by these parameters. This particular behavior of the coercive field suggests that the polarization switching in Hf-Zr-O films is predominantly determined by the nature of nanometer-scale ferroelectric domains dispersed in the films.

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Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

Abstract: Structural, ferroelectric, dielectric, and magnetic properties of BiFeO 3 / Bi 3.15 Nd 0.85 Ti 3 O 12 multilayer films derived by chemical solution deposition

Cited by 148 publications

References 18 publications

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

Solid state epitaxy of (Hf,Zr)O<sub>2</sub> thin films with orthorhombic phase

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

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