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Articles you may be interested inEnhancement of fatigue endurance in ferroelectric PZT ceramic by the addition of bismuth layered SBT

The wake-up effect which is observed in ferroelectric hafnium oxide is investigated in yttrium doped hafnium oxide prepared by chemical solution deposition. It can be shown that not the amount of cycles but the duration of the applied electrical field is essential for the wake-up. Temperature dependent wake-up cycling in a range of −160 °C to 100 °C reveals a strong temperature activation of the wake-up, which can be attributed to ion rearrangement during cycling. By using asymmetrical electrodes, resistive valence change mechanism switching can be observed coincident with ferroelectric switching. From the given results, it can be concluded that redistribution of oxygen vacancies is the origin of the wake-up effect.

The ferroelectric properties of hafnium oxide based thin films prepared by chemical solution deposition (CSD) are investigated. In this extensive study, a wealth of strongly different dopants (size and valence) and dopant concentrations is used to induce ferroelectricity in 42 nm thin films. Using the same precursors and preparation conditions for all dopants a good comparability is given. In particular, the dopant size appears to have a crucial impact on the resulting ferroelectric properties. For smaller dopants only a small ferroelectric response is observed whereas for larger dopants the remanent polarization is increased significantly. The crystal phase for varying dopant concentrations and dopant sizes is investigated by grazing incidence X-ray diffractions (GI-XRD). A dominating cubic phase is found for doping concentrations showing the highest remanent polarization. Similar to first CSD studies on Y:HfO 2 , this is reflected in a prominent wake-up behavior, which is attributed to a phase transition from cubic to orthorhombic during field cycling.

Structural, ferroelectric, dielectric, and magnetic properties of BiFeO 3 / Bi 3.15 Nd 0.85 Ti 3 O 12 multilayer films derived by chemical solution deposition