2006
DOI: 10.1007/s10854-006-0016-1
|View full text |Cite
|
Sign up to set email alerts
|

Chemical and sol–gel processing of tellurite glasses for optoelectronics

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
18
0

Year Published

2009
2009
2024
2024

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 39 publications
(18 citation statements)
references
References 43 publications
0
18
0
Order By: Relevance
“…Therefore, the formation of Te-O-Te bonds and C-O-C groups is relevant to the molecular structure change of Te(O 2 C 3 H 6 ) 2 . The molecule structure of Te(O 2 C 3 H 6 ) 2 is regard as being composed of rows of · · ·O-TeO 3 · · ·O-TeO 3 · · ·O-TeO 3 · · ·, and polymeric molecules form through these intermediate bonds [10,28]. When the precursor was heat-treated at 130 • C, the nonhydrolytic condensation reaction may take place within the precursor complex.…”
Section: Study Of the Nonhydrolytic Sol-gel Process In The Teo 2 Systemmentioning
confidence: 99%
See 2 more Smart Citations
“…Therefore, the formation of Te-O-Te bonds and C-O-C groups is relevant to the molecular structure change of Te(O 2 C 3 H 6 ) 2 . The molecule structure of Te(O 2 C 3 H 6 ) 2 is regard as being composed of rows of · · ·O-TeO 3 · · ·O-TeO 3 · · ·O-TeO 3 · · ·, and polymeric molecules form through these intermediate bonds [10,28]. When the precursor was heat-treated at 130 • C, the nonhydrolytic condensation reaction may take place within the precursor complex.…”
Section: Study Of the Nonhydrolytic Sol-gel Process In The Teo 2 Systemmentioning
confidence: 99%
“…In particular, it allows producing metal oxide thin films in a wide range of compositions on a variety of substrates, and the process is relatively simple. However, the processing of TeO 2 based glass thin films via hydrolytic sol-gel (HSG) method entails some difficulties, mainly due to the high chemical reactivity of tellurium alkoxides toward hydrolysis [10]. In recent years, Hodgson et al and Coste et al have developed some valuable approaches to prepare TeO 2 based materials by hydrolytic sol-gel process from these tellurium alkoxides, including the use of glycols or citric acid as hydrolytic reaction modifiers, the use of Te(VI) alkoxides as precursors, and chemical liberation of water from esterification reaction [11][12][13].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…The unique physical and chemical properties of Tellurium dioxide (TeO 2 ) make it suitable for a wide range of applications including deflectors [1], modulators [2], dosimeters [3,4], optical storage material [5], laser devices [6], and gas sensors [7,8]. TeO 2 nanorods have been synthesized by a range of techniques such as thermal evaporation of Te powders [11], laser ablation of Te [7], and thermal oxidation of Te in a flow of O 2 with no use of catalyst [12].…”
Section: Introductionmentioning
confidence: 99%
“…Several kinds of 1D zigzag nanostructures including InP [5], AlN [6], SiC [7], GaN [8], SnO 2 [9], and so forth have been reported in the literature. a-TeO 2 is a versatile wide band gap semiconductor material with physical and chemical properties that make it suitable for various technological applications such as deflectors [10], modulators [11], dosimeters [12], optical storage material [13], laser devices [14] and gas sensors [15]. The conventional processing of TeO 2 material has just been used for preparing bulk materials and thin films.…”
Section: Introductionmentioning
confidence: 99%