Chemical amplification of resist lines (CARL)

Sebald, Michael; Sezi, Recai; Leuschner, Rainer; Ahne, Hellmut; Birkle, S.

doi:10.1016/0167-9317(90)90164-o

Cited by 15 publications

(5 citation statements)

References 7 publications

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“…Although anhydride-copolymers (Fig. 3, Polymer I and II) exhibit good performance in top resists for the Si-CARL process, poor alkaline solubility that is provided only by slow hydrolysis of anhydride groups in alkaline developers requires DUV exposure energies of about 360 mJ/cm2 [8]. However, photosensitivity of alkaline-developable diazo-inhibited resists can be improved to some extent with the use of resist polymers with improved alkaline solubility, e.g.…”

Section: Measurementsmentioning

confidence: 98%

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<title>Application aspects of the Si-CARL bilayer process</title>

Sebald

Berthold

Beyer

et al. 1991

Advances in Resist Technology and Processing VIII

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The basic chemistry and lithographic characteristics of anhydride-containing, diazo-based NUV and DUV resists as well as silylation of top resist patterns with aqueous solutions of silicon-containing diamines in the Si-CARL bilayer process (CARL: Chemical Amplification of Resist Lines) were reported recently. This paper describes technical control of the Si-CARL process for g-line and DUV in a 6" pilot line using automatic equipment. Linewidth uniformity of top resist patterns is not affected by silylation and is found to be 0.045 im (3) for nominal 0.4 jim lines! spaces, the resolution limit of the 0.55 NA g-line stepper used. Both overexposure and linewidth increase due to silylation conditions can be used in the Si-CARL process for optimization of defocus latitudes. With the use of a 0.55 NA g-line stepper total defocus latitudes are 2.8 im for 0.6 im equal lines and spaces and > 3.2 xm for isolated 0.6 im spaces. In order to meet the requirement for sufficient throughput on KrF-excimerlaser steppers the sensitivity of DUV top resists is improved by chemical variations of resist polymers. The use of maleimide-containing resist polymers with improved alkaline solubility in diazo-inhibited top resists allows resolution of 0.25 im lines and spaces at 161 mJ!cm2 on a 0.37 NA KrF-excimerlaser stepper. Further considerable improvement ofDUV sensitivity to 1 1 mJ!cm2 was achieved using an acid-catalyzed top resist based on onium-salt and a terpolymer containing N-t-BOC-maleimide-units.

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Section: Measurementsmentioning

confidence: 98%

“…With the development of anhydride containing positive resists and a concept for aqueous phase silylation this problem was solved by Chemical Amplification of(top) Resist Lines (CARL) in the Si-CARL bilayer process [8,9] by biasing top resist structures prior to pattern transfer. The three basic steps of this process Figure 1.…”

Section: Introductionmentioning

confidence: 99%

<title>Application aspects of the Si-CARL bilayer process</title>

Sebald

Berthold

Beyer

et al. 1991

Advances in Resist Technology and Processing VIII

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“…LEEPL has required multiple layer resist systems with the combination of thin film imaging and bulk etch transfer, such as bi-layer and tri-layer processes [1 1 ] . In bi-layer approaches, it is known that the chemical amplification of resist lines (CARL) and the top surface imaging (TSI) approaches with liquid or vapor silylation agents, generate very high etch resistant masks into under layer materials [12,13]. But, from the standpoint of process simplicity, the application of silicon containing resist would have advantages in eliminating the additional silylation step.…”

Section: Resist Criteria For Leeplmentioning

confidence: 99%

Ultra Thin Film Resist for Low Energy E-beam Projection Lithography.

Nakamura

Ishikawa

Sato

et al. 2002

J. Photopol. Sci. Technol.

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Recently, new resist criteria for low energy electron beam projection lithography (LEEPL) such as bi-layer, chemically amplified and silicon containing resists have been requested. In order to investigate the lithographic characteristics of each system, three chemically amplified resist samples consisting of silsesquioxane base polymer were prepared. It was found using a 50kV direct writing electron beam tool that the resist characteristics at 50nm film thickness indicated unique results compared with that of the 100nm, 150nm and 200nm film thickness in the resist screening. The screened resists presented around 80nm resolution with 180nm pitch in LEEPL imaging. However, the coating defect was detailed as a challenge for imaging ultra thin film resists.

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“…However, a combination of either bilayer 1 or trilayer 2 systems and plasma etching techniques, as well as surface imaging proposals for single layer schemes, can also be considered as promising approaches in lithographic transfer processes. The single layer technique has been applied resulting in a simplification of the lithographic processes, such as diffusion enhanced silyating resist ͑DESIRE͒, 3 chemical amplification of resist lines ͑CARL͒, 4 and other methodologies that have shown high aspect ratios and fine linewidth in thin film photoresist. In these applications the most commonly used photolithographic methods are typically carried out over commercial thin positive photoresists modified by liquid or gas phase silylation treatment.…”

Section: Introductionmentioning

confidence: 99%

Dry development of photosensitive polyimides for high resolution and aspect ratio applications

Muñoz¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Dry development of sub-0.25 μm features patterned with 193 nm silylation resist Application of plasma polymerized methylsilane resist for all-dry 193 nm deep ultraviolet processing A plasma developing process for photosensitive polyimide layers has been investigated as an alternative to wet development. Silylation of photoimageable polyimide by applying an organosilicon compound and subsequent ultraviolet exposure using a g-line mask aligner equipment lead, as a consequence, to copolymerization of photoactive functional groups of silylating agents and sensitizer groups of the polyimide-based photoresists. Development of the photoresist layer is carried out by means of oxygen-containing plasma. Interaction of oxygen plasma with a silylated surface of polyimide leads to the formation of a silicon oxide layer that acts as a barrier giving large differences in the etching rates of the photoresist covered and not covered with organosilane. The influence of O 2 plasma etching process parameters on the etching selectivity is studied. The photochemical silylation process and the dry developing method have been characterized by scanning electron microscopy and Fourier transform infrared spectroscopy.

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Chemical amplification of resist lines (CARL)

Cited by 15 publications

References 7 publications

<title>Application aspects of the Si-CARL bilayer process</title>

<title>Application aspects of the Si-CARL bilayer process</title>

Ultra Thin Film Resist for Low Energy E-beam Projection Lithography.

Dry development of photosensitive polyimides for high resolution and aspect ratio applications

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