1995
DOI: 10.1116/1.588100
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Dry development of photosensitive polyimides for high resolution and aspect ratio applications

Abstract: Dry development of sub-0.25 μm features patterned with 193 nm silylation resist Application of plasma polymerized methylsilane resist for all-dry 193 nm deep ultraviolet processing A plasma developing process for photosensitive polyimide layers has been investigated as an alternative to wet development. Silylation of photoimageable polyimide by applying an organosilicon compound and subsequent ultraviolet exposure using a g-line mask aligner equipment lead, as a consequence, to copolymerization of photoactive … Show more

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Cited by 4 publications
(2 citation statements)
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“…1b). [23] This optimization of the O 2 -RIE process enables us to make lithographic masks with arrays of posts of 30±40 nm in height and 20±30 nm in diameter from a single spin-coated block copolymer film. 1c).…”
mentioning
confidence: 99%
“…1b). [23] This optimization of the O 2 -RIE process enables us to make lithographic masks with arrays of posts of 30±40 nm in height and 20±30 nm in diameter from a single spin-coated block copolymer film. 1c).…”
mentioning
confidence: 99%
“…The behavior of ion flux and thus neutral beam flux with pressure is manifested in the behavior of the etch rate. A maximum in polymer etch rate with pressure in oxygen plasmas has been observed by Munoz and Dominguez, 26 Juan and Pang, 24 Hartney et al 27 and Hsiao, Miller, and Kellock. 28 It should be noted, however that, in contrast to our case, in all these studies the sample was immersed in the plasma.…”
Section: Effect Of Pressurementioning
confidence: 78%