Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission

Behavior of stress induced leakage current in thin HfOxNy films

“…Trapping is reversible via a corresponding detrapping process, 17,18 which gives a method to verify the influence of the electron trapping to the SILC. As shown in Fig.…”

Interfacial Reaction and Electrical Properties of HfO2 Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

“…The substantial increase in the leakage current from the dark to the photo flux is attributed to the internal photoemission of the carriers into the dielectric conduction band. The shift at negative gate voltage is much larger than at positive gate voltage, which implies that the centroid of the oxide charge is located closer to the gate than to the substrate, − which is consistent with the formation of parasitic interlayer between the Ti electrode and HfO 2 .…”

Work Function Modulation and Thermal Stability of Reduced Graphene Oxide Gate Electrodes in MOS Devices

“…Moreover, all the charges in the SiO 2 reside close to the Si–SiO 2 interface, and hence, the impact of these charges on the electrostatics of the graphene layers due to corresponding image charges would be minimal. In high-κ dielectrics, the charges in the dielectric are reported to be present in the central region of the dielectric or close to the top gate electrode. − These charges may substantially affect the charge distribution in the graphene and hence the electronic properties of graphene deposited on high-κ dielectrics. A thickness series experiment is commonly performed to separate the contributions of oxide charges and Φ ms in the flat band voltage shift of MOS devices. , In this technique, MOS devices are fabricated with different thicknesses of the dielectric, and the flat band voltage is plotted as a function of the dielectric thickness as per eq .…”