Behavior of stress induced leakage current in thin HfOxNy films

Abstract

The behavior of stress induced leakage current (SILC) in thin HfOxNy films is investigated. Except for the H dispersive transport process, the electron trapping process is responsible for the SILC generation in HfOxNy dielectric. This trapping process is severely modulated by temperature, thickness, and stress polarity. The recovery of SILC also proves the influence of trapping process to SILC.

A pseudopotential model for Dirac electrons in graphene with line defects

“…It is clear that for a ≥ 1 there exists only the trivial solution b2 a = 1, and the transmission probability can reach in this case its maximum value T I,σ2 = 1 for β = ± π 2 (τ = ±1). It is amazing to note that our result (28) indeed looks similar to the expression (26), derived in paper [16] as a low energy limit in a much more involved calculation. By identifying the expressions b 2 /a = τ 2 /τ 2 1 = x, it thus could be suggested that the coefficients a, b 2 in our pseudopotential model effectively correspond to the hopping parameter quantities τ 2 1 , and τ 2 , respectively.…”

“…in [14,16,24,25]. In [16] the authors with the use of the tight-binding lattice model and the Green function formalism obtained the following result for the transmission probability in the low energy limit…”

“…Defect line containing pentagonal and octagonal carbon rings [14,16] Let us next consider the model of graphene with a defect line, containing pentagonal and octagonal carbon rings, described, e.g. in [14,16,24,25]. In [16] the authors with the use of the tight-binding lattice model and the Green function formalism obtained the following result for the transmission probability in the low energy limit…”

“…In particular, as line defects have a simple geometry, this makes them easier for a theoretical study and suitable for the use for controlled transport in graphene. In this context, let us mention the recent theoretical studies of electronic transport through a line defect in graphene considered in [16], which were based upon the Green function approach.The aim of this paper is to study line defects as barriers for the electron propagation by using the effective Dirac equation for massless electrons in (monolayer) graphene [4][5][6][7][8], in the framework of a schematic pseudopotential model. We shall consider all possible types of barrier-type perturbations, chosen for convenience at the same position x and described in the limiting case by a pseudopotential term W (x), depending on pseudospin (sublattice) indices and valley (Dirac point) indices.…”

“…In particular, as line defects have a simple geometry, this makes them easier for a theoretical study and suitable for the use for controlled transport in graphene. In this context, let us mention the recent theoretical studies of electronic transport through a line defect in graphene considered in [16], which were based upon the Green function approach.…”