Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique

Abstract

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Charge-optimized many-body potential for the hafnium/hafnium oxide system

“…In particular, the formation of a low dielectric-constant hafnium silicate interfacial layer 9 and the presence of oxygen defects at both the hafnia/silicon interface and in the hafnia film that trap electrons lead to a decrease in channel mobility and an instability in the threshold voltage. 10,11 Hafnia crystallizes into three crystalline polymorphs at ambient pressure: a monoclinic ͑P2 1 / c͒ phase, a tetragonal ͑P4 2 nmc͒ phase, and a cubic fluorite ͑Fm3m͒ phase. The monoclinic-to-tetragonal transition takes place at 2000 K while the tetragonal-to-cubic transition occurs at 2900 K. The melting point of the cubic phase is at 3085 K. 12 There are also two high-pressure phases: the orthorhombic I phase ͑Pbca, Brookite-type structure͒ above 10 GPa and the orthorhombic II phase ͑Pnma, PbCl 2 -type, or cotunnite structure͒ above 30 GPa.…”

The Pulsed Id-Vgmethodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

“…Reports have shown that, in addition to FTC, high-κ gate dielectrics also demonstrate fast relaxation of the trapped charge, although on a slightly longer time scale [88,104]. Fig.…”

Interfacial oxide growth at silicon∕high-k oxide interfaces: First principles modeling of the Si–HfO2 interface

“…Defects at the interface and in the bulk oxide trap charge reduce channel mobility ͑deep traps͒, increase leakage current ͑shallow traps͒, 2,7-9 and causing instability of the threshold voltage. 10 In standard MOSFET fabrication, defects in SiO 2 are passivated by hydrogen, but in HfO 2 this causes as many problems as it solves. 11 Various other postdeposition treatments have been tried, especially nitrogen-based, 12 but with little success in reducing fixed charge in the insulator.…”