Charge transport along luminescent oxide layers containing Si and SiC nanoparticles

Jambois, O.; Vilà, A.; Pellegrino, P.; Carreras, Josep; Pérez-Rodrı́guez, A.; Garrido, B.; Bonafos, Caroline; Benassayag, Gérard

doi:10.1016/j.jlumin.2006.08.067

Cited by 6 publications

(5 citation statements)

References 19 publications

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“…For example, we reported that layers of thermal SiO 2 implanted with Si and annealed at high temperature show good agreement with Fowler-Nordheim injection, and the EL mechanism of excitation of the Si-ncls was attributed to impact ionization. 22 This is also the case reported by Nazarov et al, 10 who observed a Fowler-Nordheim-type injec- tion in SiO x : Er layers that have been fabricated by sequential implantation of Si and Er in a SiO 2 layer made by thermal oxidation of a Si substrate. In this study, the higher density of defects due to the preparation method seems to favor the injection of charges inside the dielectric, preventing hot electron injection, when the electric field is not too high.…”

Section: B Conduction and El Propertiessupporting

confidence: 68%

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Jambois

Berencén

Hijazi

et al. 2009

Journal of Applied Physics

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We have studied the current transport and electroluminescence properties of metal oxide semiconductor ͑MOS͒ devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole-Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler-Nordheim tunneling. The results suggest that the electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an electroluminescence power efficiency above 10 −3 %.

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Section: B Conduction and El Propertiessupporting

confidence: 68%

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Jambois

Berencén

Hijazi

et al. 2009

Journal of Applied Physics

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“…In that case, possible solutions are C : SiQDs grown inside a silicon rich SiC matrix or N:SiQDs prepared in Si-rich SiN matrices [382]. In this context, interesting examples of QD LED structures were also samples prepared by Si/C co-implanted silica [395,396], in which, however, SiC QDs could also have played a role.…”

Section: Phosphors Leds and Displaysmentioning

confidence: 99%

Silicon quantum dots: surface matters

Dohnalová

Gregorkiewicz

Kůsová

2014

J. Phys.: Condens. Matter

199

208

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Silicon quantum dots (SiQDs) hold great promise for many future technologies. Silicon is already at the core of photovoltaics and microelectronics, and SiQDs are capable of efficient light emission and amplification. This is crucial for the development of the next technological frontiers-silicon photonics and optoelectronics. Unlike any other quantum dots (QDs), SiQDs are made of non-toxic and abundant material, offering one of the spectrally broadest emission tunabilities accessible with semiconductor QDs and allowing for tailored radiative rates over many orders of magnitude. This extraordinary flexibility of optical properties is achieved via a combination of the spatial confinement of carriers and the strong influence of surface chemistry. The complex physics of this material, which is still being unraveled, leads to new effects, opening up new opportunities for applications. In this review we summarize the latest progress in this fascinating research field, with special attention given to surface-induced effects, such as the emergence of direct bandgap transitions, and collective effects in densely packed QDs, such as space separated quantum cutting.

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“…The demonstrations of electroluminescence (EL) are mostly broad, covering the visible spectral range or defectrelated blue emissions only. 1,[23][24][25][26] L opez-Vidrier et al 27 and Fu et al 6 have recently demonstrated efficient EL in the Si NC/SiO 2 superlattice structure, but they too observed EL over a broad spectral range. Therefore, the demonstration of tunable EL emission utilizing the QCE in Si NCs may provide a colossal step toward optoelectronics in Si platforms.…”

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confidence: 99%

Size-tunable electroluminescence characteristics of quantum confined Si nanocrystals embedded in Si-rich oxide matrix

Sarkar

Bar

Singh

et al. 2020

Applied Physics Letters

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Tunable electroluminescence properties of size-controlled Si nanocrystals embedded in silicon rich oxide films are demonstrated at room temperature, using an active light emitting layer in the metal oxide semiconductor device structure. Plasma enhanced chemical vapor deposited Si-rich oxide films were annealed at elevated temperatures to form Si nanocrystals of varying diameters. A typical redshift in the photoluminescence peak is observed with increasing annealing temperature, confirming the formation of quantum confined Si nanocrystals. The carrier transport and light emission mechanism have been studied in detail through current-voltage characteristics and ultrafast transient spectroscopy, respectively. The origin of electroluminescence and the size-tunable emission peak have been analyzed and attributed to the radiative recombination of carriers within Si nanocrystal quantum wells. The fabricated Si nanocrystal-based metal oxide semiconductor light emitting diode and the resultant size-dependent tunable electroluminescence are very attractive as a potential CMOS compatible optical source for future photonic integrated chips.

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Charge transport along luminescent oxide layers containing Si and SiC nanoparticles

Cited by 6 publications

References 19 publications

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Silicon quantum dots: surface matters

Size-tunable electroluminescence characteristics of quantum confined Si nanocrystals embedded in Si-rich oxide matrix

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