2014
DOI: 10.1088/0953-8984/26/17/173201
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Silicon quantum dots: surface matters

Abstract: Silicon quantum dots (SiQDs) hold great promise for many future technologies. Silicon is already at the core of photovoltaics and microelectronics, and SiQDs are capable of efficient light emission and amplification. This is crucial for the development of the next technological frontiers-silicon photonics and optoelectronics. Unlike any other quantum dots (QDs), SiQDs are made of non-toxic and abundant material, offering one of the spectrally broadest emission tunabilities accessible with semiconductor QDs and… Show more

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Cited by 199 publications
(218 citation statements)
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“…[23][24][25] A key factor for the development of complex sensing approaches is that these nanomaterials can be decorated with myriads of biomolecules, [26][27][28] nanoparticles show size-dependent emission properties that cover the whole visible spectrum. 44,45 Nanomaterials have been a true game changer in the field of solution-based sensing due to their easy functionalization, chemical reactivity and outstanding physical properties. In this manuscript we will review different solution-based strategies for the naked-eye detection of analytes with nanomaterials.…”
Section: 20mentioning
confidence: 99%
“…[23][24][25] A key factor for the development of complex sensing approaches is that these nanomaterials can be decorated with myriads of biomolecules, [26][27][28] nanoparticles show size-dependent emission properties that cover the whole visible spectrum. 44,45 Nanomaterials have been a true game changer in the field of solution-based sensing due to their easy functionalization, chemical reactivity and outstanding physical properties. In this manuscript we will review different solution-based strategies for the naked-eye detection of analytes with nanomaterials.…”
Section: 20mentioning
confidence: 99%
“…The use of SiNCs instead of the bulk form of silicon, however, can alleviate the problem of poor light emission only partly, because SiNCs preserve the indirect nature of the bandgap 1,2 , and the light-emission rate thus remains low, on the order of 10 4 s 21 or less 3 . However, when passivated by a "suitable" organic material, SiNCs can have fast macroscopic radiative lifetime [4][5][6][7] and can actually be transformed into a direct-bandgap material 5,[8][9][10] . In particular, we have recently shown both theoretically and experimentally that properly capped SiNCs can be strain-engineered into a material with fundamental direct C 15 -C 25 ' bandgap 5 and the corresponding fast electron-hole radiative recombination rate of 10 8 s 21 (see also Figure 1a and the section on "Results overview").…”
Section: Introductionmentioning
confidence: 99%
“…For example, oxidation of high surface area Si occurs readily in ambient and laboratory conditions and is frequently cited to coincide with sudden, drastic changes in the observed PL. 23,51,52,55,[65][66][67] However, the observed increase or decrease in emission energy that oxygen passivation causes varies from study to study.…”
Section: Effect Of Defects On Photoluminescence From Silicon Nanopartmentioning
confidence: 99%
“…However, the formation of such a layer is difficult to achieve experimentally, and surface oxidation typically results in the formation of electronically active states within the bandgap. 23,51,52,55,63,[65][66][67][68]70 Alkyl-passivation has long been used in order to surface stabilize bulk and nanocrystalline silicon surfaces, in particular against ambient oxidation. Alkylpassivation is thought to have negligible effects on the photophysical properties of the Si domains, similar to hydride-passivation.…”
Section: Surface Defect Prevention In Silicon Nanoparticlesmentioning
confidence: 99%
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