Charge pumping current from single Si/SiO2interface traps: Direct observation ofPbcenters and fundamental trap-counting by the charge pumping method

Tsuchiya, Toshiaki; Ono, Yukinori

doi:10.7567/jjap.54.04dc01

Cited by 21 publications
(15 citation statements)

References 30 publications
(54 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] Recently, we have reported our systematic experimental results on individual Si=SiO 2 interface traps obtained using the CP method, and observed for the first time that two energy levels participate in electron capture=emission processes in a single trap, and the maximum CP current (I CPMAX ) from a single trap is not fixed, i.e., fq, but is in the range of 0 ≤ I CPMAX ≤ 2 fq, where f is the gate pulse frequency and q the electron charge. 22) Although it is widely believed that I CPMAX is given by fqN, where N is the total number of traps contributing to the CP current, our experimental results established that this belief is basically incorrect. The current range 0 ≤ I CPMAX ≤ 2 fq is expected from the amphoteric nature of P b0 centers, i.e., a single P b0 center has two energy levels, one similar to a donor-like center and the other to an acceptor-like center.…”

Section: Introductionmentioning
confidence: 58%

Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory
Tsuchiya
¹
,
Lenahan
²

2017
Jpn. J. Appl. Phys.
14
0
7
0
View full text Add to dashboard Cite

We carried out a unique and systematic characterization of single amphoteric Si/SiO2 interface traps using the charge pumping (CP) method. As a result, we obtained the distribution of the energy levels of these traps for the first time. The distribution is reasonably similar to that of the Pb0 density of states reported previously. By considering the essential nature of these traps (i.e., those with two energy levels), factors depending on the energy levels, and the Coulomb interactions between traps, we fundamentally corrected the conventional CP theory.

show abstract

Section: Introductionmentioning
confidence: 58%

show abstract

“…This interpretation of CP has been widely accepted [19] but never fully demonstrated at the single defect level. A few reports in the literature [20][21][22][23][24] claimed to have observed one charge per cycle per defect, but there is always more than one charge per cycle in all these reports and the precision has been poor, until now.…”

Section: Methodsmentioning
confidence: 98%

Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source
Cheung
¹
,
Wang
²
,
Campbell
³

2020
Micromachines
7
0
1
0
View full text Add to dashboard Cite

Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source. Charge pumping is often described as a process that ‘pumps’ one charge per driving period per defect. The precision needed to utilize this charge pumping mechanism as a quantized current source requires a rigorous demonstration of the basic charge pumping mechanism. Here we present experimental results on a single-defect MOSFET that shows that the one charge pumped per cycle mechanism is valid. This validity is also discussed through a variety of physical arguments that enrich the current understanding of charge pumping. The known sources of errors as well as potential sources of error are also discussed. The precision of such a process is sufficient to encourage further exploration of charge pumping based on quantum current sources.

show abstract

“…Then, using Vsw = 0.8 V, a value such that the two components visible at Vsw=0.4 V already merged, and starting from a gate signal at f=10 6 Hz in which th = tl, th was increased with regard to tl on the one hand, or tl was increased with regard to th on the other hand. In other words starting from a small but identical filling of the traps by the two carrier types, the filling by one carrier type was increased with regard to the other and vice versa.…”

Section: Interface Trap Time Constant Distribution (Ittcd): Traps Locmentioning
confidence: 99%

Study of Si(100)-SiO₂ Interface Trap Time Constant Distributions in Large Area Conventional MOSFETs-Comparison with Submicron Devices
Bauza¹,
Guenifi²
2020
ECS Trans.
1
0
0
0
View full text Add to dashboard Cite

A charge pumping (CP) technique has been proposed more than two decades ago to extract the Si(100)-SiO 2 interface trap time constant distribution (ITTCD) that exists at this interface. To that aim, several Elliot curves (1) needed to be recorded at a frequency, f 0 , of the order of f 0 =10 4 Hz and for a set of selected gate voltage swing, Vsw, values. The charge recombining during one period of the gate signal, Qcp 0 =Icp 0 /f 0 was extracted from the maximum CP current measured, Icp 0 , at f 0 , supposed to result from recombination due to identical electron and hole free carrier concentrations at the interface. From Qcp 0 , the recombined charge was finally measured as function of frequency, f, yielding a set of Qcp 0 (f) curves, one for each Vsw value. Assuming, as done primarily, that carrier capture resulted from tunneling from the interface to the traps in the near oxide, the set of Qcp 0 (f) curves provided a single trap "depth" concentration profile. The same kind of profile was recorded from n-and p-channel MOSFETs of different technologies (2, 3). As Pb0 centers are known to be the amphoteric defects that characterize the Si(100)-SiO 2 interface, even after forming annealing in conventional MOSFETs with thermally grown oxides, and as these centers are located at the interface, the trap time constant distribution was re-interpreted. Then, in order to evidence the way the Pb0 centers occupy the interface, the experimental conditions primarily used to extract the profiles are modified. These results are discussed with regard to previous work in that field (4, 5) and to recent results obtained by T. Tsuchiya and co-workers on submicron devices (6, 7).

show abstract

Charge pumping current from single Si/SiO₂interface traps: Direct observation ofP_bcenters and fundamental trap-counting by the charge pumping method

Abstract: We made accurate measurements of the maximum charge pumping (CP) current (I CPMAX) from single Si/SiO 2 interface traps, and observed for the first time that their current range is 0

Cited by 21 publications

References 30 publications

Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory

Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory

Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source

Study of Si(100)-SiO₂ Interface Trap Time Constant Distributions in Large Area Conventional MOSFETs-Comparison with Submicron Devices

Contact Info

Product

Resources

About

Charge pumping current from single Si/SiO2interface traps: Direct observation ofPbcenters and fundamental trap-counting by the charge pumping method

Abstract: We made accurate measurements of the maximum charge pumping (CP) current (I CPMAX) from single Si/SiO 2 interface traps, and observed for the first time that their current range is 0

Cited by 21 publications

References 30 publications

Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory

Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory

Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source

Study of Si(100)-SiO2 Interface Trap Time Constant Distributions in Large Area Conventional MOSFETs-Comparison with Submicron Devices

Contact Info

Product

Resources

About

Charge pumping current from single Si/SiO₂interface traps: Direct observation ofP_bcenters and fundamental trap-counting by the charge pumping method

Study of Si(100)-SiO₂ Interface Trap Time Constant Distributions in Large Area Conventional MOSFETs-Comparison with Submicron Devices