Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory

Abstract

We carried out a unique and systematic characterization of single amphoteric Si/SiO2 interface traps using the charge pumping (CP) method. As a result, we obtained the distribution of the energy levels of these traps for the first time. The distribution is reasonably similar to that of the Pb0 density of states reported previously. By considering the essential nature of these traps (i.e., those with two energy levels), factors depending on the energy levels, and the Coulomb interactions between traps, we fundamentally corrected the conventional CP theory.

3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs

“…7b): it represents a pessimistic memory scenario since it improves the SRH generation/recombination mechanism [19]. Other trap energy distributions (centered at E i ± 0.28 eV for acceptor/donor, respectively [20]) were simulated with no significant difference in the V ON statistics (not shown). It is worth remarking that, since trap spatial distributions are Figure 7a-b shows the anode current curves for different trap concentrations and nature.…”

Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source

“…This interpretation of CP has been widely accepted [19] but never fully demonstrated at the single defect level. A few reports in the literature [20][21][22][23][24] claimed to have observed one charge per cycle per defect, but there is always more than one charge per cycle in all these reports and the precision has been poor, until now.…”

Charge Pumping Under Spin Resonance in Si(100) Metal-Oxide-Semiconductor Transistors

“…The charge pumping (CP) [9][10][11][12][13][14][15][16][17][18], which generates a recombination current by a gate pulse voltage, is a fundamental charge recombination process via interface defects, and has been applied for investigating the interface defects of MOS field-effect transistors (MOSFETs). We expect that the CP could also be a key process for the manipulation of the charges and spins of electrons at the defect sites.…”

“…The phenomenon was first reported by Brugler and Jespers in 1969 [9], and the basic theoretical model was constructed by Groeseneken et al in 1984 [10]. Since then, a large number of reports have been issued on this process because it allows us to evaluate various kinds of electrical properties of the interface defects, such as capture cross sections [11,14,16] and density of states profile [10,12,15,18]. However, the origins, or the bonding configurations, of the defects responsible for the CP recombination have not yet been identified.…”