Charge Configuration Memory Devices: Energy Efficiency and Switching Speed

Abstract

Current trends in data processing have given impetus for an intense search of new concepts of memory devices with emphasis on efficiency, speed, and scalability. A promising new approach to memory storage is based on resistance switching between charge-ordered domain states in the layered dichalcogenide 1T-TaS 2 . Here we investigate the energy efficiency scaling of such charge configuration memory (CCM) devices as a function of device size and data write time τ W as well as other parameters that have bearing on efficient device operation. We find that switching energy efficiency scales approximately linearly with both quantities over multiple decades, departing from linearity only when τ W approaches the ∼0.5 ps intrinsic switching limit. Compared to current state of the art memory devices, CCM devices are found to be much faster and significantly more energy efficient, demonstrated here with two-terminal switching using 2.2 fJ, 16 ps electrical pulses.

Energy-adaptive resistive switching with controllable thresholds in insulator–metal transition

“…Recently, energy-adaptive devices have received huge attention and sparked intense interest in advanced RS and energy-efficient components. 25–29 Active response and self-regulation will contribute to the realization of feedback, monitoring and passive control networks in natural neurons. 30–32…”

“…Recently, energyadaptive devices have received huge attention and sparked intense interest in advanced RS and energy-efficient components. [25][26][27][28][29] Active response and self-regulation will contribute to the realization of feedback, monitoring and passive control networks in natural neurons. [30][31][32] Signicantly, emergence of energy-adaptive is precisely to meet the requirements of complex environments, which highly require dynamic and controllable features.…”

Perforated Turbostratic Graphene As Active Layer in a Nonvolatile Resistive Switching Memory Device

“…This can serve the purpose of future electronics, i.e., green electronics and green computing goals. Use of two-terminal resistive random-access memory (ReRAM) devices has emerged as advantageous over conventional three-terminal transistor based random access memories due to their high-density memory storage, scalability, fast switching speed, low power consumption, etc . The conventional ReRAM has a capacitor like structure (metal–insulator–metal) with the active material (insulator) sandwiched between two metallic electrodes.…”

The path to Wigner crystallization in the 2D polaron quantum spin liquid candidate system 1T-TaS2

“…In addition, specific features of the band structure may lead to further interesting effects, such as exciton condensation 5 and CDW ordering aided by Fermi surface nesting 20 . Most recent interest has arisen from metastability and control of quantum orders achieved by light or carrier injection, which is very important both from a fundamental point of view 11,13 as well as applications [21][22][23] . For a detailed understanding of these phenomena, structural data on local lattice deformations are crucial in elucidating symmetry breaking and structural changes associated with electron ordering in different phases.…”