Stress recognitions have been exploited in flexible sensors, and attracted considerable attention in the fields of electronic skins and intelligent robots towards artificial intelligence. Inspired by human skin, to identify...
Adaptive energy-scaling resistive switching with active response and self-regulation via controllable insulator–metal transition shows promise in energy-efficient devices.
In this letter, the resistive switching characteristics of CeO2 based memristor are investigated by utilizing an unusual, non-conventional, and a unique approach of “chronoamperometry.” This methodology provides useful insights into memristive characterization for achieving configurable device functionalities such as categorization of minimum threshold potential to prompt switching behaviour, tuneable on/off ratios with accessible multi-level data storage states, etc. Moreover, the analytical studies on carrier drift/diffusion controlled-memristor response and the estimation of time constants at various applied fixed potentials provide tangible evidence to support valence change mechanism in CeO2 based memristors.
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