A strong nonlinear optical response of 2D MoSe2 nanoflakes (NFs) through spatial self‐phase modulation (SSPM) and cross‐phase modulation (XPM) induced by nonlocal coherent light–matter interactions is reported. The coherent interaction of light and MoSe2 NFs creates the SSPM of laser beams, forming concentric diffraction rings. The nonlinear refractive index (n2) and third‐order broadband nonlinear optical susceptibility (χ(3)) of MoSe2 NFs are determined from the self‐diffraction pattern at different exciting wavelengths of 405, 532, and 671 nm with varying laser intensity. The evolution and deformation of diffraction ring patterns are observed and analyzed by the “wind‐chime” model and thermal effect. By taking advantage of the reverse saturated absorption of 2D SnS2 NFs compared to MoSe2, an all‐optical diode has been designed with MoSe2/SnS2 hybrid structure to demonstrate the nonreciprocal light propagation. Few other optical devices based on MoSe2 and semiconducting materials such as Bi2Se3, CuPc, and graphene have been investigated. The all‐optical logic gates and all‐optical information conversion have been demonstrated through the XPM technique using two laser beams. The proposed optical scheme based on MoSe2 NFs has been demonstrated as a potential candidate for all‐optical nonlinear photonic devices such as all‐optical diodes and all‐optical switches.

Perforated turbostratic graphene (PTG) sheets have been synthesized from a natural waste material, dead bougainvillea bracts, using a single-step pyrolysis method, and a resistive switching (RS) memory device has been constructed with it for the very first time. Herein, the edges of these large-area multilayer graphene sheets are highly conducting due to the turbostratic stacking between the adjacent layers of the graphene sheets. These highly conducting PTG sheets embedded inside an insulating polymer matrix can act as an active layer for resistive switching memory devices. This hybrid structure shows nonlinear resistance change between two distinct resistance states by simple bias voltage variation. The trap-assisted space-charge-limited conduction can realize the high resistive state (HRS), whereas the low resistive state (LRS) takes place through direct conduction. To achieve the best performing device, a number of optimizations have been performed, like the variation of polymer matrices, variation of PTG and polymer concentration, active layer thickness variation, and top electrode area variation. The best performing device showed reproducibility of current–voltage data (>200 cycles), low power consumption (SET voltage <1 V), a high ON/OFF ratio (>104), a long retention time (>104 s), and a large number of endurance cycles (>103). High writing-read-erase-read speed and flexibility/bending cycle tests were also carried out on the best-performing device to examine its tenacity. The current PTG-based flexible RS memory device derived from a biowaste, dead bougainvillea bracts, can provide an important step toward developing green electronics.

The current study attempted to explore midlife personal growth (generativity) and how it relates to the personality structure and domains of the working midlifers. The Loyola Generativity Scale, by McAdams & de St. Aubin (1992) and The Neo Five Factor Inventory by Costa & McCrae, (1984) were used. The sample comprised of 548 working male and female midlifers. The data were statistically analyzed by computing the Analyses of variance (ANOVA), post-hoc analyses, Pearson's Product-moment Correlation and Stepwise Multiple Regression Analyses (SMRA).Findings revealed a significant age and sex effect on the generativity. Generativity was significantly correlated to and significantly predicted by several of the personality variables in the current sample. Implications of the findings are mentioned herein.