A strong nonlinear optical response of 2D MoSe2 nanoflakes (NFs) through spatial self‐phase modulation (SSPM) and cross‐phase modulation (XPM) induced by nonlocal coherent light–matter interactions is reported. The coherent interaction of light and MoSe2 NFs creates the SSPM of laser beams, forming concentric diffraction rings. The nonlinear refractive index (n2) and third‐order broadband nonlinear optical susceptibility (χ(3)) of MoSe2 NFs are determined from the self‐diffraction pattern at different exciting wavelengths of 405, 532, and 671 nm with varying laser intensity. The evolution and deformation of diffraction ring patterns are observed and analyzed by the “wind‐chime” model and thermal effect. By taking advantage of the reverse saturated absorption of 2D SnS2 NFs compared to MoSe2, an all‐optical diode has been designed with MoSe2/SnS2 hybrid structure to demonstrate the nonreciprocal light propagation. Few other optical devices based on MoSe2 and semiconducting materials such as Bi2Se3, CuPc, and graphene have been investigated. The all‐optical logic gates and all‐optical information conversion have been demonstrated through the XPM technique using two laser beams. The proposed optical scheme based on MoSe2 NFs has been demonstrated as a potential candidate for all‐optical nonlinear photonic devices such as all‐optical diodes and all‐optical switches.
Resistive
random access memory (RRAM) devices are widely considered
promising candidates for future memory and logic applications. Though
their excellent performances have been reported over the years, resistive
switching due to various charge conduction mechanisms is still being
debated. Here, we report systematic investigations on resistive switching
in a MoSe2-based nonvolatile bipolar memory device by measuring
current–voltage characteristics and using low-frequency conductance
noise spectroscopy in both low and high resistive states. The memory
device was fabricated in a metal–insulator–metal configuration
by mixing MoSe2 nanoflakes in a poly(methyl methacrylate)
(PMMA) matrix sandwiched between the top and bottom electrodes. The
device shows an appreciable retention capacity and long cycle endurances
in the low resistive state (LRS)/high resistive state (HRS) in repeated
measurement cycles. The low-frequency conductance fluctuation power
spectra show 1/f noise characteristics in the low
resistive state and 1/f
2 behavior in the
high resistive state. The 1/f
2 characteristics
of the noise power spectra indicate the presence of random telegraphic
noise. The stochastic analysis of the current fluctuation in the high
resistive state further confirms that the enhanced random telegraphic
noise originates from the transport of charge carriers by trap-assisted
tunneling in the MoSe2@PMMA matrix.
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