Characterization of Silver Content Upon Properties of Nanostructured Nickel Oxide Thin Films

SALLOOM, H. T.; Hadi, Esraa H.; Habubi, Nadir F.; Chiad, Sami Salman; Jadan, M.; Addasi, Jihad S.

doi:10.15251/djnb.2020.154.1189

Cited by 20 publications

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“…The dislocation density is found to be 45.22, 43.96 and 39.22 as T a rise. This strain (Ԑ) can be calculated from Eq.3 [36][37][38]:…”

Section: Resultsmentioning

confidence: 99%

Effect of annealing temperature on the physical of nanostructured TiO2 films prepared by sol-gel method

Abdul Razaq,

Jasim,

Chiad

et al. 2024

JOR

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This study uses glass substrates to create nanostructured TiO2 thin films employing SolGel method. Afterwards, TiO2 films are annealed in air for two hours at (400, 450, and 500) °C. The XRD tests demonstrate that all films are tetragonal polycrystalline and have orientations equal to those described in the literature. These findings suggest that when the annealing temperature rises, grain size increases. As the annealing temperature is raised, the Full Width at Half Maximum (FWHM) reduces from 0.57° to 0.0.51°, and the dislocation density drops from 45.22 to 39.22.18 nm, respectively. AFM has examined the thin films' surface morphology. The films formed using this method have good crystalline and homogenous surfaces, according to AFM tests. With an increase in annealing temperature, thin films' average particle size, average roughness, and Root Mean Square (RMS) value all drop. The films' optical characteristics. The transmission was over 97% decreased with increasing annealing temperatures. It is found that the band gap decreases from 3.42 to 3.3 eV with increasing annealing temperature. Between 300 and 900 nm, the films' refractive indices range from 2.89 to 2.2.76. With higher annealing temperatures, the films' extinction coefficients fall.

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“…The dislocation density is found to be 45.22, 43.96 and 39.22 as T a rise. This strain (Ԑ) can be calculated from Eq.3 [36][37][38]:…”

Section: Resultsmentioning

confidence: 99%

Effect of annealing temperature on the physical of nanostructured TiO2 films prepared by sol-gel method

Abdul Razaq,

Jasim,

Chiad

et al. 2024

JOR

Self Cite

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“…Hall effect measurement indicates that the carrier concentration increases from 3.2 × 10 18 cm −3 to 8.8 × 10 20 cm −3 after the silver atom ratio increased from 2.4% to 6.0%, but the carrier mobility decreases from 2.15 cm 2 /V•s to 0.027 cm 2 /V•s，respectively. Therefore, the hole concentration is significantly increased after Ag doping, 22,23 Ag doping can improve the electrical characteristics of the film, but its optical transmittance deteriorates, 24,25 so appropriate Ag content is the key point to improving the comprehensive performance of the NiO x film.…”

Section: Resultsmentioning

confidence: 99%

A Strategy to Optimize Nickel Oxide/Crystalline Silicon Heterocontact of HJT Solar Cells

Yang

Zhao

et al. 2023

ECS J. Solid State Sci. Technol.

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NiOx is a p-type semiconductor material with wide band-gap (3.6-4.0 eV) and good thermal and chemical stability. In terms of energy band structure, NiOx/n-Si possesses low valence band offset to allow holes and high conduction band offset to block electrons. NiOx is thus a promising hole-selective layer for n-type c-Si based heterojunction (HJT) solar cells. However, intrinsic NiOx suffers from low carrier concentration and poor conductivity, which severely limits its development in photovoltaics. This study aimed to obtain Ag-doped NiOx film with high carrier concentration and low resistivity by co-sputtering using high-purity Ag and NiOx target for high efficiency solar cells. The results show that appropriate Ag doping can increase the acceptor concentration of the film, promote the tunnelling effect, reduce interface recombination, and thus improve the device efficiency. When Ag content is 2.4%, the fill factor of Al/ITO/NiOx:Ag/SiOx/c-Si/SiOx/Al solar cell is increased from 52.97% to 68.42%, and the power conversion efficiency reaches 9.11%. Combined with the analysis of AFORS-HET simulation, the mechanism how Ag doping works in the hetrojunction is revealed.

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“…The samples all exhibit high absorption in the visible region, making them promising candidates for use in thin film solar cells. The equation below was used to determine the optical energy band gap E g of the undoped and Ag-doped CdSe thin films [32,33]:…”

Section: Optical Properties Studymentioning

confidence: 99%

Effect of silver-doping on the structural, topography and optical CdSe thin films

Jasim¹,

Hadi²,

Chiad³

et al. 2023

JOR

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Using thermal evaporation, thin films of silver-doped CdSe were synthesized on glass bases. A hexagonal structure with a preference orientation along (100) plane according to the X-ray diffraction pattern. The surface topography was determined using Atomic Force Microscopy (AFM). AFM detects spherical nature nanoparticles and roughness rate of the CdSe thin film decreases and the root mean square decreases with (2 and 4) % doping in silver. As the doping content increase, the optical energy bandgap decrease from 1.85 eV to 1.75 eV. Optical analysis indicates that Ag doping in CdSe results in a redshift in band edge.

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Characterization of Silver Content Upon Properties of Nanostructured Nickel Oxide Thin Films

Cited by 20 publications

References 0 publications

Effect of annealing temperature on the physical of nanostructured TiO2 films prepared by sol-gel method

Effect of annealing temperature on the physical of nanostructured TiO2 films prepared by sol-gel method

A Strategy to Optimize Nickel Oxide/Crystalline Silicon Heterocontact of HJT Solar Cells

Effect of silver-doping on the structural, topography and optical CdSe thin films

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