Characterization of SiC Wafers by Photoluminescence Mapping

Tajima, Michio; Higashi, E.; Hayashi, Toshihiko; Kinoshita, Hiroyuki; Shiomi, Hiroya

doi:10.4028/www.scientific.net/msf.527-529.711

Cited by 16 publications

(13 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Room-temperature PL mapping experiments 17) using a focused laser beam as a scanning excitation source were performed to expand SSFs and simultaneously obtain their PL map images. For this purpose, an Ar-ion laser beam consisting of 364 nm lines focused down to a spot of $2 m diameter by using an objective (18Â) was used to illuminate the sample surface at a high intensity of 5:4 Â 10 4 W/cm 2 , which allowed intentional expansion of SSFs.…”

Section: Hmentioning

confidence: 99%

Polarization of Photoluminescence from Partial Dislocations in 4H-SiC

Hirano

Tsuchida

Tajima

et al. 2013

Appl. Phys. Express

Self Cite

View full text Add to dashboard Cite

Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. The PLs from mobile PDs under optical excitation, which are 30°-Si(g) PDs, and PDs tilted by 6° from their Burgers vector (6°-PDs) were found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g) PDs have isotropic wave functions.

show abstract

Section: Hmentioning

confidence: 99%

Polarization of Photoluminescence from Partial Dislocations in 4H-SiC

Hirano

Tsuchida

Tajima

et al. 2013

Appl. Phys. Express

Self Cite

View full text Add to dashboard Cite

show abstract

“…[9][10][11][12] Photoluminescence imaging has often used for the observation in SiC epitaxial layers and semi-insulating (SI) SiC wafers. 1,[13][14][15] For the inspection of dislocations in n-type SiC wafers for the power device application, birefringence imaging using a polarized light microscope is a promising method. 16) The contrast in the birefringence image originates from the strain field in the crystal.…”

Section: Introductionmentioning

confidence: 99%

Design of automatic detection algorithm for dislocation contrasts in birefringence images of SiC wafers

Kawata

Murayama²,

Sumitani

et al. 2021

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Birefringence imaging is one of the powerful methods for non-destructive characterization of defects in the semiconductor crystals. However, due to the complicated and unclear contrasts of dislocations in the birefringence image, it was considered to be difficult to automatically detect the position of the dislocation contrasts by the conventional image processing. In the present study, we designed the automatic detection algorithm for the dislocation contrasts taking into account the characteristic feature of the dislocation contrasts, which were always pair of black and white contrasts. To detect the large change in the contrast level near the dislocation contrast, the automatic detection algorithm was constructed by using a variance filter. Finally, we succeeded in detecting the position of the dislocation contrasts with relatively high precision and sensitivity.

show abstract

“…Such broad emission from the gettered defects has been attributed to point defects in SiC epilayers. 23 From these results, the origin of the luminescence at the step-bunched region can be interpreted as that the step-bunched site acts as a gettering site for point defects present in the SiC sample. The diffusion of these point defects to the step-bunched site is enhanced by the UV excitation, 24 which saturates after a certain density of these point defects has gettered to the step-bunched site.…”

Section: Resultsmentioning

confidence: 94%