Polarization of Photoluminescence from Partial Dislocations in 4H-SiC

Hirano, Rii; Tsuchida, Hidekazu; Tajima, Michio; Itoh, Kohei M.; Maeda, Koji

doi:10.7567/apex.6.011301

Cited by 8 publications

(5 citation statements)

References 24 publications

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“…In addition to those mentioned above, the origin of the BPDs composing curved PDs found in previous literature 40,[48][49][50] might be the same as the immobile combination of PDs described in this paper.…”

Section: Discussionsupporting

confidence: 75%

Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC

Nishio

Okada

Ota

et al. 2020

Jpn. J. Appl. Phys.

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Some combinations of immobile partial dislocations (PDs) that constitute basal plane dislocations (BPDs) have not previously been considered as sources for single Shockley stacking fault expansion. We searched for and found this type of BPD and investigated its structure. The realistic reason for immobile C-core PDs being converted into mobile Si-core PDs is speculated from the results obtained by plan-view transmission electron microscopy (TEM) and cross-sectional scanning TEM. A model is proposed from a dynamic viewpoint for interpreting the mechanism of core-species change by step-flow motion during epitaxial crystal growth in 4H-SiC. Moreover, all possible combinations of immobile PDs are summarized and the necessary condition for immobile BPDs to change to include mobile PDs is discussed.

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Section: Discussionsupporting

confidence: 75%

Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC

Nishio

Okada

Ota

et al. 2020

Jpn. J. Appl. Phys.

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“…195,196) Expanded SSFs in lightly-doped SiC can be easily identified from their unique luminescence whose peak wavelength is 424 nm at room temperature 197) or infrared luminescence from the partial dislocations (PDs) that encompass the SSF. 198,199) Figure 18 illustrates a schematic bond configuration near the edge of an SSF in SiC, where the left-and right-hand sides show the structure of perfect SiC and the SSF, respectively. Using Zhdanov's notation, the stacking sequence of the SSF is expressed as (13) (or (31) for some other SSFs) and that of perfect SiC is (22).…”

Section: Research On Sic Bipolar Devicesmentioning

confidence: 99%

“…BPDs and 1SSFs in SiC are typically detected using either photoluminescence (PL) imaging/mapping 198,199,[348][349][350] or X-ray topography. [351][352][353] PL imaging or mapping is a fast and non-destructive technique for the detection of extended defects in SiC.…”

Section: Bpds and 1ssfsmentioning

confidence: 99%

Defect engineering in SiC technology for high-voltage power devices

Kimoto

Watanabe

2020

Appl. Phys. Express

189

100

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Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-state loss, and fast switching, compared with those of the Si counterparts. Through recent progress in the material and device technologies of SiC, production of 600–3300 V class SiC unipolar devices such as power metal-oxide-semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes has started, and the adoption of SiC devices has been demonstrated to greatly reduce power loss in real systems. However, the interface defects and bulk defects in SiC power MOSFETs severely limit the device performance and reliability. In this review, the advantages and present status of SiC devices are introduced and then defect engineering in SiC power devices is presented. In particular, two critical issues, namely defects near the oxide/SiC interface and the expansion of single Shockley-type stacking faults, are discussed. The current physical understanding as well as attempts to reduce these defects and to minimize defect-associated problems are reviewed.

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“…So, it is necessary not only to predict how they expand according to the conditions of the excess carrier injection [22,23], but also to characterize the nature of the BPDs by various angles. Photoluminescence (PL) imaging is one of the high-speed and nondestructive method for detecting BPDs in epitaxial layers of 4H-SiC [24][25][26]. Also, the spectral characteristics of Si-core (Si(g)) PDs have been reported and their peak emission value is 1.8 eV [27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Analysis of Individual Partial Dislocations in 4H-SiC Epilayers

Nishio

Okada

Ota

et al. 2020

MSF

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Configurations of the basal plane dislocations in 4H-SiC epitaxial layers are classified into two types, having typical combinations of ‘straight Si-core and straight C-core’ and ‘straight Si-core and curved C-core’ partial dislocations. The core species are determined by the photoluminescence images and observation of the moving Si-core partial dislocations by ultra-violet light illumination. Each partial dislocation was analyzed by photoluminescence spectroscopy. As the results, C-core partial dislocations have been found to have different peak wavelengths depending on the excitation power of the illumination. Also from the detailed analysis of individual partial dislocations, the curved C-core partial dislocations have been found to have different characters which may be originated from the mixture of different types of dislocations. It has been suggested that this model is possibly described by continuous connection of 30o and 90o dislocations which have different configurations of dangling bonds. The difference in photoluminescence peak wavelength might be explained by the structural difference.

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Polarization of Photoluminescence from Partial Dislocations in 4H-SiC

Cited by 8 publications

References 24 publications

Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC

Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC

Defect engineering in SiC technology for high-voltage power devices

Photoluminescence Analysis of Individual Partial Dislocations in 4H-SiC Epilayers

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