Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation

Tajima, Michio; Tanaka, Mitsuya; Hoshino, Norihiro

doi:10.4028/www.scientific.net/msf.389-393.597

Cited by 12 publications

(14 citation statements)

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“…In recent years, a photoluminescence (PL) mapping or imaging technique has been developed as a fast nondestructive method to detect the location of dislocations and identify their type (TSD=TED=BPD). [131][132][133][134][135][136] Figure 15 shows (a) a typical PL image taken from a 180-µm-thick n-type SiC(0001) epitaxial layer at 880 nm and (b) an optical micrograph of the same location after molten KOH etching. In PL images taken at the band-edge emission (390 nm), threading dislocations and BPDs appear as dark spots and dark lines (or curves) (not shown), respectively.…”

Section: Dislocations In Sic Epitaxial Layersmentioning

confidence: 99%

Material science and device physics in SiC technology for high-voltage power devices

Kimoto

2015

Jpn. J. Appl. Phys.

871

469

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Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600–1700 V) SiC Schottky barrier diodes (SBDs) and power metal–oxide–semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.

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Section: Dislocations In Sic Epitaxial Layersmentioning

confidence: 99%

Material science and device physics in SiC technology for high-voltage power devices

Kimoto

2015

Jpn. J. Appl. Phys.

871

469

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“…Therefore the presented experimentally estimated activities of 7 Be and 22 Na atoms produced in nuclear spallation reaction were used to calculate the numbers of their atoms in SiC detectors directly after the irradiation (the decay constants are known with high precision). 7 Be and 22 Na activities in the samples are very similar. This qualitatively confirms that 7 Be was produced in proton interaction with carbon nuclei and 22 Na -with silicon nuclei.…”

Section: Irradition-induced Changes Of the Elemental Composition Of Mmentioning

confidence: 71%

“…(5). We have calculated the ratios of the cross-section of 7 Be production and that of the production of radionuclides and isotopes lighter than C atoms. It was assumed that the short-living radionuclides had fully decayed, except tritium.…”

Section: Irradition-induced Changes Of the Elemental Composition Of Mmentioning

confidence: 99%

“…The numbers of 7 Be decay product, i. e., 7 Li, and 22 Na decay product - 22 Ne, produced within 390 days after the irradiation, were added to the numbers of their isotopes produced by different channels of reactions (Tables 2 and 3).…”

Section: Irradition-induced Changes Of the Elemental Composition Of Mmentioning

confidence: 99%

“…Inhomogeneity of the defect distribution can be very dramatic and requires utilization of spatially resolved non-contact and nondestructive scanning (mapping) techniques. A number of mapping techniques were used to prove defect profiling in SiC wafers, including photoluminescence [7,8], spectroscopic optical transmission [9], capacitive contactless resistivity [10], Raman imaging [11], and thermally stimulated luminescence [12,8]. Electron and hole traps in the forbidden energy gap usually deteriorate device effectiveness due to the trapping of free charge carriers generated by irradiation.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of high-energy protons on 4H-SiC radiation detectors

Kažukauskas¹,

Jasiulionis²,

Kalendra³

2005

Lith. J. Phys.

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We present investigation of high energy radiation detectors based on 4H-SiC as influenced by irradiation with 24 GeV proton doses of up to 10 16 cm −2 . SiC detectors have been produced from n-type 4H-SiC epilayers grown on the top of the n + -type substrate. They were supplied with a nickel ohmic contact on the back surface and a gold Schottky contact on the top. Activities and numbers of 7 Be and 22 Na atoms produced in SiC detectors after the irradiation were measured experimentally. Activities of other radionuclides were calculated on the basis of this data. Activities of 7 Be and 22 Na were proportional to the total irradiation dose and ranged from 1.3 to 890 Bq and from 1.9 to 950 Bq, respectively. In the samples irradiated with 1 · 10 13 and 1 · 10 16 protons/cm 2 390 days after the irradiation the number of radiated electrons with different energies was from 1.0 to 600 per second, respectively. Contact properties of the devices were investigated by means of the current-voltage (I-V ) characteristics. It was found that proton irradiation with the highest doses leads to the significant changes of the contact properties. Namely, the contact potential barrier grows from about 0.7-0.75 eV in the pristine and less irradiated samples up to about 0.84 eV in the detectors irradiated by highest doses. Moreover, rectifying behaviour of the Schottky contacts becomes much less expressed upon irradiation, tending to become nearly symmetrical. The observed behaviour probably can be explained by the appearance of the irradiation-induced inhomogeneous regions of detectors that limits the applicability of classical contact theory.

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Characterization Techniques and Defects in Silicon Carbide

Kimoto¹,

Cooper

2014

Fundamentals of Silicon Carbide Technology

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Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation

Cited by 12 publications

References 0 publications

Material science and device physics in SiC technology for high-voltage power devices

Material science and device physics in SiC technology for high-voltage power devices

Effect of high-energy protons on 4H-SiC radiation detectors

Characterization Techniques and Defects in Silicon Carbide

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