Characterization Techniques and Defects in Silicon Carbide

Kimoto, Tsunenobu; Cooper, James A.

doi:10.1002/9781118313534.ch5

Cited by 3 publications

(1 citation statement)

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“…Vertical structure devices are used for high voltage and high current power devices; the analysis and reduction of dislocations are therefore the most important issues in SiC bulk wafer and epitaxial film growth, because they have a strong impact on device performances and reliability. [1][2][3] Diamond is a well-known candidate material for next generation power devices and the reduction of dislocations is one of the most important challenges which must be overcome to produce diamond wafers of sufficient quality. 4) Although a long time has passed since the early stages of dislocation studies on diamond using x-ray topography, 5) research activities involving dislocation analysis and its reduction are currently in a very primitive stage.…”

Section: Introductionmentioning

confidence: 99%

Dislocation analysis of homoepitaxial diamond (001) film by x-ray topography

Shikata

Matsuyama

Teraji

2019

Jpn. J. Appl. Phys.

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There is a great need for high-quality diamond with low dislocation density for high-output power device applications. In this study, we attempted to identify dislocations originating from the homo-epitaxial film/substrate interface in relation to the off-angle of the initial substrate by comparing the dislocation images obtained using x-ray topography by synchrotron radiation facility. For homo-epitaxial film growth on (001) substrate tilted by ∼3°, 3 dislocations were found after growth in the 0.09 cm 2 area, corresponding to a density of 30 cm −2 . On the other hand, 23 dislocations generated from the film/substrate interface for homo-epitaxial growth on a (001) substrate with ∼1°tilt angle. This fact indicates that the lateral growth using a tilted substrate is an effective way to minimize the number of additional dislocations originating from the homo-epitaxial film/substrate interface.

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