Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage SiC and Si Devices

Ni, Ze; Zheng, Sheng; Chinthavali, Madhu; Cao, Dong

doi:10.1109/jestpe.2021.3054018

Cited by 16 publications

(4 citation statements)

References 45 publications

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“…14 and Eq. 15 in [56], [57]. It could be found out that switching rates for a specific device are dependent on V gs , V th , and V gp .…”

Section: B Dynamic Parameters 1) Switching Timementioning

confidence: 98%

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

Yu,

Jahdi,

Alatise

et al. 2023

IEEE Trans. Device Mater. Relib.

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The reliability of the SiC MOSFET has always been a factor hindering the device application, especially under high voltage and high current conditions, such as in the short circuit events. This paper experimentally reviews the failure mechanisms caused by destructive short circuit impulses, and investigates the degradation patterns of key electrical parameters under repetitive short circuit events. The impact of test parameters on the short circuit reliability of SiC MOSFET has been analyzed. Approaches to characterize the electrical-thermal-mechanical stress during the short circuit period and advanced test methods are highlighted. Finally, the constraints from the standpoint of both manufacturers and users have been presented, including comparison of current SiC MOSFET devices, reliability evaluation of parallel SiC MOSFET devices, reliability improvement of the chip, performance improvement of protection circuits, and reliability assessment of SiC MOSFET devices under application-representative stress.

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“…14 and Eq. 15 in [56], [57]. It could be found out that switching rates for a specific device are dependent on V gs , V th , and V gp .…”

Section: B Dynamic Parameters 1) Switching Timementioning

confidence: 98%

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

Yu,

Jahdi,

Alatise

et al. 2023

IEEE Trans. Device Mater. Relib.

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“…Passive methods have been proposed to reduce the thermal cycling of WBG devices by using thermal buffers to increase adequate thermal capacity without degrading the thermal path [270]. As the method brings about a more complicated module packaging, the ATC is an effective method for the lifetime extension of WBG semiconductors [230], [271], [272], [273].…”

Section: G Psd Technology and Packagingmentioning

confidence: 99%

Power Converters Coolant: Past, Present, Future, and a Path Toward Active Thermal Control in Electrified Ship Power Systems

Moghassemi,

Rahman,

Ozkan

et al. 2023

IEEE Access

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Power converters have widespread applications in automotive, renewables, and power systems. The demand for power modules with low power consumption and high efficiency has increased due to advancements in semiconductor devices. So, power converters need to be highly efficient to reduce costs associated with energy dissipation and cooling requirements. This paper discusses various active thermal control methods for high-power power converters. It covers modulation and configuration techniques, ranging from single configurations to cascaded, modular, and multilevel converters. These concepts form the basis of power electronics building blocks, particularly relevant in all-electric ship systems. Power electronics building blocks represent a This article has been accepted for publication in IEEE Access.

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“…( 2), and its switching rate can be derived as Eq. ( 3) [24]. The current slew rate is transferred into the derivative of V gs .…”

Section: B Dynamic Parametersmentioning

confidence: 99%

Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses

Jahdi

Mellor

et al. 2023

IEEE Trans. Power Electron.

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In this paper, the reliability of Planar, Symmetrical, and Asymmetrical trench SiC MOSFETs is analysed under repetitive short circuit impulses at 300 K and 450 K. Both static and dynamic parameters are measured to characterize the degradation pattern of the three MOSFET structures. The degradation mechanisms are analysed and the internal electro-thermal behavior of MOSFETs is revealed through TCAD models. It has been found out that there is minor degradation for Planar SiC devices under both test conditions. The Symmetrical trench SiC MOSFET has the lowest reliability, which fails after 200 and 80 cycles at room and elevated temperature. The Asymmetrical trench SiC MOSFET has slightly higher reliability, failing after 1500 cycles and 500 cycles at room and elevated temperature, respectively. A comprehensive range of measurements until failure and the corresponding Silvaco TCAD analysis confirms that for both trench SiC MOSFETs, the deterioration of the gate oxide is responsible for the degradations and device failure. The higher the temperature, the higher electro-thermo-mechanical stress the devices suffer.

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Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage SiC and Si Devices

Cited by 16 publications

References 45 publications

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

Power Converters Coolant: Past, Present, Future, and a Path Toward Active Thermal Control in Electrified Ship Power Systems

Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses

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