Dislocation analysis of homoepitaxial diamond (001) film by x-ray topography

Shikata, Shinichi; Matsuyama, Yuka; Teraji, Tokuyuki

doi:10.7567/1347-4065/ab0541

Cited by 13 publications

(3 citation statements)

References 28 publications

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“…25) The experimental apparatus of the reflectance mode setup and a photograph of the XRT measurement system have been presented in a previous report. 26) The monochromatized SR X-ray source was used with an energy of 12.0 keV. Reflectance mode images were obtained using 〈404〉 diffraction vectors.…”

Section: Methodsmentioning

confidence: 99%

Forbidden X-ray diffraction of highly B doped diamond substrate

Kouda¹,

Sato²,

Takeuchi³

et al. 2021

Jpn. J. Appl. Phys.

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The (222) forbidden diffraction of a highly B doped high-pressure high-temperature (HPHT) diamond crystal was investigated by precise mapping using synchrotron radiation X-ray diffraction. The intensity ratios of ( 222) to (111) were high, ranging from 20% to 36% for the high-density dislocation areas with stacking faults (SFs), whereas the intensity ratios for the low-density dislocation areas ranged from 11% to 20%. For the high-density dislocation areas, the intensity distribution was very high in the upper region, which might correspond to the dislocation density along the X-ray path. In contrast, the intensity ratio of high-quality undoped HPHT crystals ranged from 3.0% to 4.3%, which might be due to multiple reflections of the high-quality crystal. The substrate quality can be conveniently investigated prior to device fabrication by examining the intensity of the forbidden diffraction using laboratory X-ray diffraction equipment.

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Section: Methodsmentioning

confidence: 99%

Forbidden X-ray diffraction of highly B doped diamond substrate

Kouda¹,

Sato²,

Takeuchi³

et al. 2021

Jpn. J. Appl. Phys.

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“…Dislocation bundles were observed at the film-substrate interface in the epitaxial structures, likely caused by the relaxation of elastic macroscopic stress. g Later in 2014, Kasu et al presented a study on the observation and characterization of dislocations in HPHT single-crystal diamond with low dislocation density using SR-XRT [46] . The authors analyzed the image contrasts for various vectors and determine the type and direction of the dislocations.…”

Section: Diamondmentioning

confidence: 99%

High-precision X-ray characterization for basic materials in modern high-end integrated circuit

Zhao,

Mo,

Zheng

et al. 2024

J. Semicond.

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Semiconductor materials exemplify humanity's unwavering pursuit of enhanced performance, efficiency, and functionality in electronic devices. From its early iterations to the advanced variants of today, this field has undergone an extraordinary evolution. As the reliability requirements of integrated circuits continue to increase, the industry is placing greater emphasis on the crystal qualities. Consequently, conducting a range of characterization tests on the crystals has become necessary. This paper will examine the correlation between crystal quality, device performance, and production yield, emphasizing the significance of crystal characterization tests and the important role of high-precision synchrotron radiation X-ray topography characterization in semiconductor analysis. Finally, we will cover the specific applications of synchrotron radiation characterization in the development of semiconductor materials.

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“…Diamond is a crystal made of carbon, which is a light element, and X-rays can penetrate deep into the crystal. The approximate penetration depth was estimated as 870 µm for <404> diffractions by 12.0keV X-ray [10]. This is because deep 3D dislocations are projected onto a 2D film, and the directions of the dislocations are complicated and difficult to estimate.…”

Section: Introductionmentioning

confidence: 99%

Dislocation Vector Analysis Method of Deep Dislocation Having C-Axis Segment in Diamond

Shikata

Akashi

2020

MSF

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X-ray topography is an effective tool to investigate dislocations in semiconductor crystals. Due to low X-ray absorption coefficients of diamond, X-rays can penetrate deep into the crystal. Thus, deep three-dimensional (3D) dislocations are projected on two-dimension (2D) film, which makes dislocation analysis particularly challenging. Dislocation vectors from the films obtained using a set of the same diffraction vectors were identified using topographical and geometrical analyses. The depth and position of the dislocations in a crystal that was projected on a film were determined using geometrical relationship. The proposed analysis method was verified by analyzing several dislocations using four <404> diffraction films. The types of dislocation were identified through Burgers vector analysis.

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Dislocation analysis of homoepitaxial diamond (001) film by x-ray topography

Cited by 13 publications

References 28 publications

Forbidden X-ray diffraction of highly B doped diamond substrate

Forbidden X-ray diffraction of highly B doped diamond substrate

High-precision X-ray characterization for basic materials in modern high-end integrated circuit

Dislocation Vector Analysis Method of Deep Dislocation Having C-Axis Segment in Diamond

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