Material science and device physics in SiC technology for high-voltage power devices

Kimoto, Tsunenobu

doi:10.7567/jjap.54.040103

Cited by 834 publications

(460 citation statements)

References 292 publications

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“…[3][4][5][6] Currently thermal oxides grown or annealed in NO or N 2 O are the mainstream dielectrics but more reduction in NITs is needed. 7 Other large bandgap dielectrics such as AlN, Al 2 O 3 and HfO 2 have also been investigated. [8][9][10][11][12][13][14] One of the alternatives is aluminum oxide (Al 2 O 3 ) with bandgap of ∼ 7.0 eV.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

et al. 2018

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We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakdown field (5MV/cm) than Al2O3 films grown by atomic layer deposition (ALD) or rapid thermal processing (RTP). Furthermore, the interface state density is significantly lower than in MOS capacitors with nitrided thermal silicon dioxide, grown in N2O, serving as the gate dielectric. Deposition of an additional SiO2 film on the top of the Al2O3 layer increases the breakdown voltage of the MOS capacitors while maintaining low density of interface traps. We examine the origin of negative charges frequently encountered in Al2O3 films grown on SiC and find that these charges consist of trapped electrons which can be released from the Al2O3 layer by depletion bias stress and ultraviolet light exposure. This electron trapping needs to be reduced if Al2O3 is to be used as a gate dielectric in SiC MOS technology.

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Section: Introductionmentioning

confidence: 99%

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

et al. 2018

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“…SiC is an attractive material for metal surface coatings, 1,2) photoelectrodes, 3) solar cells, 4) ultraviolet photodetectors, 5) power devices, 6,7) and other devices because it has excellent material properties such as a large energy band gap, a high chemical stability, a high robustness, a high thermal conductivity, and conductivity controllability through impurity doping. 8) These properties of SiC thin films are also preferable for the application of electrode coatings to water electrolysis technology.…”

Section: Introductionmentioning

confidence: 99%

Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor

Doi

Takeuchi

Jin

et al. 2017

Jpn. J. Appl. Phys.

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We have examined the formation of SiC thin films by chemical vapor deposition (CVD) using vinylsilane and investigated the chemical bonding state and crystallinity of the prepared SiC thin films. We achieved the formation of a Si-H-less SiC film at growth temperatures as low as 600 °C. Also, we investigated the in situ doping effect of N by the incorporation of NH 3 gas in the SiC growth and demonstrated that the chemical composition of N in SiC thin films was controlled by adjusting the NH 3 flow rate. In addition, we examined the growth of SiC thin films on a Cu substrate and achieved the formation of a SiC thin film while avoiding any significant reaction between SiC and Cu at a growth temperature of 700 °C.

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“…SiC has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness [1][2][3][4][5][6][7][8] . Table 1 shows a summary of SiC properties at room temperature in comparison to Si and other wide bandgap semiconductors.…”

Section: Silicon Carbidementioning

confidence: 99%

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

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SiC is a wide bandgap semiconductor with many attractive properties. It has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness. Typically, SiC homoepitaxial layers are grown using the chemical vapor deposition (CVD) technique. Experimental studies of SiC CVD have been limited to post-process measuring of the layer rather than in situ measurements. In most cases, the observations are presented in terms of input conditions rather than in terms of the unknown growth condition near the surface. This makes it difficult to really understand the underlying mechanism of what causes the features observed experimentally. With help of computational methods such as computational fluid dynamic (CFD) we can now explore various variables that are usually not possible to measure. CFD modeling of SiC CVD, however, requires inputs such as thermochemical properties and chemical reactions, which in many cases are not known. In this thesis, we use quantum chemical calculations to provide the missing details complementary to CFD modeling.We first determine the thermochemical properties of the halides and halohydrides of Si and C species, SiHnXm and CHnXm, for X being F, Cl and Br which were shown to be reliable compared to the available experimental and/or theoretical data. In the study of gas-phase kinetics, we combine ab initio methods and DFTs with conventional transition state theory to derive kinetic parameters for gas phase reactions related to Si-H-X species. Lastly, we study surface adsorptions related to SiC-CVD such as adsorptions of small C-H and Si-H-X species, and in the case of C-H adsorption, the study was extended to include subsequent surface reactions where stable surface products may be formed. iv SammanfattningSiC är ett halvledarmaterial med stort bandgap som har många attraktiva egenskaper. Det har fått särskilt mycket uppmärksamhet inom kraftkomponenter och sensorer, men också för tillämpningar inom biomedicin och biosensorer. Detta beror på materialets stora bandgap, förmågan att klara höga elektriska fält, goda värmeledningsförmåga och kemiska stabilitet. Epitaxiska skikt av SiC för kommersiella tillämpningar tillverkas med hjälp av kemisk ångdepo-sition (Chemical Vapor Deposition, CVD). Experimentella studier av SiC CVD begränsas till mätningar som görs i efterhand, snarare än under processens gång. För det mesta görs observationer med utgångspunkt från processens ingångsvärden istället för från de okända tillväxtförhållandena vid ytan. Detta gör det svårt att verkligen förstå de underliggande mekanismerna för de observerade experimentella resultaten. Med hjälp av beräkningsmetoder, såsom computational fluid dynamics (CFD) kan vi utforska olika variabler som vanligtvis inte går att mäta. Dock kräver CFD-modellering av SiC CVD ingångs-data i form av termokemiska egenskaper och kemiska reaktion...

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Material science and device physics in SiC technology for high-voltage power devices

Cited by 834 publications

References 292 publications

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

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