Characterization of RF-sputtered self-polarized PZT thin films for IR sensor arrays

Ellipsometric Investigations of the Refractive Index Depth Profile in PZT Thin Films

“…This is due to the presence of a PbO phase in the surface layer (refractive index n 2.6 at room temperature) obtained by AES surface measurements. The thickness of this surface layer was previously determined as about 80 nm by glow-discharge optical emission spectroscopy composition profiling and thermal wave spectroscopy (LIMM-laser intensity modulation method) polarization profiling [1] in good agreement with Fig. 1.…”

“…The surface was strongly lead enriched (Pb/Ti þ Zr 1.6) while the bottom electrode interface was lead depleted [1]. Ellipsometric measurements were performed with J.…”

“…In this case, self-polarized thin films whose switching is disabled by domain wall "locking" due to charge trapping by intrinsic defects or impurities are the material of choice. The practically total absence of ferroelectricity in strong self-polarized lead zirconate-titanate films (PZT) give evidence for a total local compensation of the polarization by an appropriate space charge [1]. Due to a high volatility of lead oxide, the major electric active defects in lead containing perovskite lattices are Pb and oxygen vacancies.…”

Compositional and Optical Gradient in Films of PbZrxTi1-xO3 (PZT) Family

“…A significant decrease in Pb and increase in Zr can be seen in the optical data as a decrease in n(d). Near the surface n(d) starts to increase, which is in good agreement with other results (Deineka et al, 1999, and January 2001Suchaneck et al, 2002).…”

“…SE has long been recognized as a powerful method for the characterization of thin films and their inhomogeneity. It has already been applied to refractive index depth profile studies of oxynitride SiO 2 N x films (Callard et al, 1998;Nguyen et al, 1996;Snyder et al, 1992;Rivory, 1998;) (additionally confirmed by chemical etching (Callard et al, 1998)), lead silicate glass (Trolier-McKinstry and Koh, 1998), oxidized copper layers (Nishizawa et al, 2004), polymers (Guenther et al, 2002), semiconductor indium tin oxide (ITO) films (Losurdo, 2004;Morton et al, 2002), sol-gel PZT thin films (Aulika et al, 2009) confirmed by TEM and EDX, and RF-sputtered self-polarized PZT thin films , and was confirmed by discharge optical emission spectroscopy (GD-OES) and pyroelectric profile measurements by the laser intensity-modulation method (LIMM) (Deineka et al, January, 2001;Suchaneck et al, 2002). SE has also been applied to the study of ion implantation depth profiles in silicon wafers and confirmed by RBS (Boher et al, 1996;Fried et al, 2004).…”