Characterization of positive photoresist

Dill, F.H.; P, Hornberger W; Hauge, P.S.; Shaw, Jane M.

doi:10.1109/t-ed.1975.18159

Cited by 425 publications

(211 citation statements)

References 2 publications

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“…In thinner photoresist masks both energy transmittance of mask and normalized focus range are increased [24,25]. This is why sidewall under thin photoresist mask has more damage rather than original thickness.…”

Section: Photoresist Erosion and Ion Angular Dispersionmentioning

confidence: 99%

Use of Hard Mask for Finer (<10 μm) Through Silicon Vias (TSVs) Etching

Choi¹,

Hong

2015

Transactions on Electrical and Electronic Materials

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Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

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Section: Photoresist Erosion and Ion Angular Dispersionmentioning

confidence: 99%

Use of Hard Mask for Finer (<10 μm) Through Silicon Vias (TSVs) Etching

Choi¹,

Hong

2015

Transactions on Electrical and Electronic Materials

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“…Acid is produced in the exposed region during a photochemical reaction process between resist and photons, which can be modeled by the Dill exposure model [8].…”

Section: Theorymentioning

confidence: 99%

Simulation of 3D inclined/rotated UV lithography and its application to microneedles

Liu

Roeder

Aygün

et al. 2012

Optik

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a b s t r a c tA 3D model is set up to simulate the exposure process of inclined/rotated UV lithography for negative SU-8 resists. The formation of inclined resist pillars and microstructures with truncated cone shapes is simulated based on a 3D exposure model in combination with a post exposure bake model for chemically amplified resists and the Mack development model. As one of the interesting applications employing this promising lithography technique for MEMS fabrication, a solid microneedle for drug delivery is simulated.

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“…We used the following equation to calculate the B parameter [16][17] of Dill based the resist transmission factor at the time overexposure completely breaks down the PAG.…”

Section: B Parameter Measurement Systemmentioning

confidence: 99%

Approach to EUV Lithography Simulation

Sekiguchi¹

2011

Advances in Unconventional Lithography

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1. Introduction 1.1 Simulation based on measured development rate measurements EUV lithography is a reduced projection lithography technology based on 13.5 nm wavelength EUV (Extreme Ultraviolet). Development of EUV lithography is currently underway for the mass production of semiconductor devices for 90 nm design rule applications for ArF dry exposures and for 65 to 45 nm design rule applications for ArF immersion exposures [1][2]. EUV lithography is among the most promising next-generation lithography tools for the 32 nm technology node [3]. The evolving consensus is that EUV exposure technologies will be applied to mass production from the year 2011 [4]. Table 1 showed the relationship among technology node, exposure numerical aperture (NA), and process coefficient factor (k 1 ) [5]. Achieving the 32 nm node based on an ArF laser source exposure technology will require the development of an optical system with NA increased to 1.55 and k1 improved to 0.26. In contrast, an exposure technology based on an EUV light source will permit the use of an optical system with 0.25 NA for mass production of the 32 nm node with room to spare. The requirement for the k1 factor is an easy-to-meet value of 0.59. These factors underscore the promise and importance of EUV exposure technologies. However, the development of EUV exposure equipment presents its own set of technology barriers, as does the development of ArF immersion exposure system. A wavelength of 13.5 nm requires a reflecting optical system with a combination of multiple multilayer reflecting mirrors [6], since no lens material can be used in the 13.5 nm wavelength range, if we rule out dioptric lenses. The development of EUV exposure equipment requires further examination of component technologies, including technologies related to light sources, illumination optical systems, projection optical systems, and masks. Although various exposure equipment manufacturers are actively promoting the development of EUV reduced projection exposure equipment [7][8], a resist material for EUV lithography must be developed before the first exposure system can be introduced. We have developed a new virtual lithography evaluation system with lithograph simulation that takes an approach completely different from conventional resist evaluation technologies (direct evaluation method), which require actual patterning to assess resists. The new evaluation system focuses on open-frame exposures using an EUV light source, measurements of development rates at various exposure doses, and lithography simulations based on development rate data. This chapter presents the results of our evaluations of EUV resists using this new system. www.intechopen.com Advances in Unconventional Lithography

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Characterization of positive photoresist

Cited by 425 publications

References 2 publications

Use of Hard Mask for Finer (<10 μm) Through Silicon Vias (TSVs) Etching

Use of Hard Mask for Finer (<10 μm) Through Silicon Vias (TSVs) Etching

Simulation of 3D inclined/rotated UV lithography and its application to microneedles

Approach to EUV Lithography Simulation

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